Inductance properties of in situ-grown horizontally aligned carbon nanotubes

IEEE Transactions on Electron Devices

Volumn 58, Issue 1, 2011, Pages 229-235

  Sun, Minghui ^a   Xiao, Zhiyong ^a   Chai, Yang ^a   Li, Yuan ^a   Chan, Philip C H ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

Carbon nanotube (CNT); diffusive transport; interconnect; kinetic inductance

Indexed keywords

ALIGNED CARBON NANOTUBES; DIFFUSIVE TRANSPORT; DIFFUSIVE TRANSPORT REGIME; DIRECT CURRENT; ELECTRON TRANSPORT; HIGH-FREQUENCY APPLICATIONS; IN-SITU; INTERCONNECT; KINETIC INDUCTANCE; KINETIC INDUCTANCES; MULTI-WALLED NANOTUBES; ONCHIP INDUCTORS; POTENTIAL APPLICATIONS; RADIO FREQUENCIES; SILICON SUBSTRATES;

CARBON NANOTUBES;

INDUCTANCE;

EID: 78650855029     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2087023     Document Type: Article

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