Pursuit of Future Interconnect Technology with Aligned Carbon Nanotube Arrays

IEEE Nanotechnology Magazine

Volumn 5, Issue 1, 2011, Pages 22-26

  Chai, Yang ^a   Sun, Minghui ^a   Xiao, Zhiyong ^a   Li, Yuan ^a   Zhang, Min ^a   Chan, Philip C H ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

ALIGNED CARBON NANOTUBES; CARRIER SCATTERING; CU INTERCONNECT; FEATURE SIZES; INTERCONNECT TECHNOLOGY; NANO SCALE; NANOMETER SIZE; PHYSICAL LIMITS; RESISTANCE CAPACITANCE; SCALE DOWN; SIGNAL DELAYS;

GRAIN BOUNDARIES;

CARBON NANOTUBES;

EID: 81255147788     PISSN: 19324510     EISSN: None     Source Type: Journal    
DOI: 10.1109/MNANO.2010.939831     Document Type: Article

References (13)

1. Y. Chai, P. C. H. Chan, Y. Y. Fu, Y. C. Chuang, and C. Y. Liu, “Copper/carbon nanotube composite interconnect for enhanced electromigration resistance,” in Proc 58th Electronic and Component Tech. Conf., 2008, pp. 412–420.
2. Y. Chai and P. C. H. Chan, “High electro-migration-resistant copper/CNT composite for interconnect applications,” in Int. Electron Device Meeting Tech. Dig., 2008, pp. 607–610.
3. Y. Chai, Z. Y. Xiao, and P. C. H. Chan “Low-resistance of carbon nanotube contact plug to silicon,” IEEE Electron Dev. Lett., vol. 30, no. 8, pp. 811–813, 2009.
4. Y. Chai, Z. Y. Xiao, and P. C. H. Chan, “Horizontally aligned carbon nanotubes for interconnect applications: Diameter-dependent contact resistance and mean free path,” Nanotechnology, vol. 21, p. 235705, 2010.
5. M. Sun, Z. Y. Xiao, Y. Chai, Y. Li, and P. C. H. Chan, “Inductance properties of silicon-in-grown horizontal carbon nanotubes,” in Proc. 60th Electronic Components and Tech. Conf., 2010, pp. 1329–1334.
6. Y. Chai, K. Zhang, M. Zhang, P. C. H. Chan, and M. M. F. Yuen, “Carbon nanotube/copper composites for via filling and thermal management,” in Proc 57th Electronic and Component Tech. Conf., 2007, pp. 1224–1229.
7. Y. Chai, Z. Y. Xiao, and P. C. H. Chan, “Electron-shading effect on the horizontal growth of carbon nanotubes using plasma-enhanced chemical vapor deposition,” Appl. Phys. Lett., vol. 94, no. 4, p. 043116, 2009.
8. Z. Y. Xiao, Y. Chai, Y. Li, M. Sun, and P. C. H. Chan, “Integration of horizontal carbon nanotube device on silicon substrate using liquid evaporation,” in Proc 60th Electronic and Component Tech. Conf., 2010, pp. 943–947.
9. H. J. Li, W. G. Lu, J. J. Li, X. D. Bai, and C. Z. Gu, “Multichannel ballistic transport in multiwall carbon nanotubes,” Phys. Rev. Lett., vol. 95, no. 8, p. 086601, 2005.
10. D. Yokoyama, T. Iwasaki, T. Yoshida, H. Kawarada, S. Sato, T. Hyakushima, M. Neihi, and Y. Awano, “Low temperature grown carbon nanotube interconnect using inner shells by chemical mechanical polishing,” Appl. Phys. Lett., vol. 91, no. 26, p. 263101, 2007.
11. M. Zhang, X. Huo, P. C. H. Chan, Q. Liang, and Z. K. Tang, “Radio-frequency characterization for the single-walled carbon nanotubes,” Appl. Phys. Lett., vol. 88, no. 16, p. 163109, 2006.
12. H. Li and K. Banerjee “High-frequency analysis of carbon nanotube interconnects and implications for on-chip inductor design,” IEEE Trans. Electron Dev., vol. 56, no. 10, pp. 2202–2214, 2009.
13. Y. Chai, P. C. H. Chan, Y. Y. Fu, Y. C. Chuang, and C. Y. Liu “Electromigration studies of Cu/CNT composite using Blech structure,” IEEE Electron Dev. Lett., vol. 29, no. 9, pp. 1001–1003, 2008.