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Volumn 59, Issue 12 PART 2, 2011, Pages 3441-3454

Analysis and design of millimeter-wave low-power CMOS LNA with transformer-multicascode topology

Author keywords

Cascode; CMOS; low noise amplifier (LNA); monolithic microwave integrated circuit (MMIC)

Indexed keywords

ANALYSIS AND DESIGN; CASCODE; CHIP SIZES; CMOS; CMOS LNA; CMOS TECHNOLOGY; DRAIN-SOURCE VOLTAGE; GAIN PERFORMANCE; LOW POWER; LOWER-POWER CONSUMPTION; SMALL-SIGNAL GAIN; SUPPLY VOLTAGES; WIDEBAND LOW-NOISE AMPLIFIER;

EID: 83655184656     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2011.2173350     Document Type: Conference Paper
Times cited : (36)

References (28)
  • 1
    • 33746638077 scopus 로고    scopus 로고
    • A miniature Q-band low noise amplifier using 0.13-μm CMOS technology
    • Jun.
    • J. H. Tsai, W. C. Chen, T. P. Wang, T. W. Huang, and H. Wang, "A miniature Q-band low noise amplifier using 0.13-μm CMOS technology," IEEE Microw. Wireless Compon. Lett., vol. 16, no. 6, pp. 327-329, Jun. 2006.
    • (2006) IEEE Microw. Wireless Compon. Lett. , vol.16 , Issue.6 , pp. 327-329
    • Tsai, J.H.1    Chen, W.C.2    Wang, T.P.3    Huang, T.W.4    Wang, H.5
  • 4
  • 5
    • 73049107888 scopus 로고    scopus 로고
    • Millimeter-wave lowpower and miniature CMOS multicascode low noise amplifiers with noise reduction topology
    • Dec.
    • B.-J. Huang, H.Wang, and K.-Y. Lin, "Millimeter-wave lowpower and miniature CMOS multicascode low noise amplifiers with noise reduction topology," IEEE Trans. Microw. Theory Tech., vol. 57, no. 12, pp. 3049-3059, Dec. 2009.
    • (2009) IEEE Trans. Microw. Theory Tech. , vol.57 , Issue.12 , pp. 3049-3059
    • Huang, B.-J.1    Wang, H.2    Lin, K.-Y.3
  • 7
    • 80052340081 scopus 로고    scopus 로고
    • A miniature Q-band CMOS LNA with quadruple-cascode topology
    • Baltimore, MD, Jun.
    • H.-C. Yeh and H. Wang, "A miniature Q-band CMOS LNA with quadruple-cascode topology," in IEEE MTT-S Int. Microw. Symp. Dig., Baltimore, MD, Jun. 2011.
    • (2011) IEEE MTT-S Int. Microw. Symp. Dig.
    • Yeh, H.-C.1    Wang, H.2
  • 9
    • 0003936046 scopus 로고    scopus 로고
    • 2nd ed. Englewood Cliffs, NJ: Prentice-Hall
    • G. Gonzales, Microwave Transistor Amplifiers, 2nd ed. Englewood Cliffs, NJ: Prentice-Hall, 1997, pp. 294-383.
    • (1997) Microwave Transistor Amplifiers , pp. 294-383
    • Gonzales, G.1
  • 10
    • 60749099343 scopus 로고    scopus 로고
    • Design of millimeter-wave CMOS radios: A tutorial
    • Jan.
    • B. Razavi, "Design of millimeter-wave CMOS radios: A tutorial," IEEE Trans. Circuits Syst. I, Reg. Papers, vol. 56, no. 1, pp. 4-16, Jan. 2009.
    • (2009) IEEE Trans. Circuits Syst. I, Reg. Papers , vol.56 , Issue.1 , pp. 4-16
    • Razavi, B.1
  • 12
    • 0016603256 scopus 로고
    • Signal and noise properties of gallium arsenide field effect transistors
    • L. Morton, Ed. New York: Academic
    • R. A. Pucel, H. A. Haus, and H. Statz, "Signal and noise properties of gallium arsenide field effect transistors," in Advances in Electronics and Electron Physics, L. Morton, Ed. New York: Academic, 1975, vol. 38, pp. 195-265.
    • (1975) Advances in Electronics and Electron Physics , vol.38 , pp. 195-265
    • Pucel, R.A.1    Haus, H.A.2    Statz, H.3
  • 15
    • 49549105132 scopus 로고    scopus 로고
    • A 22.3 dB voltage gain 6.1 dB NF 60 GHz LNA in 65 nm CMOS with differential output
    • Fukuoka, Japan: , Feb.
    • C. Weyers, P. Mayr, J. W. Kunze, and U. Langmann, "A 22.3 dB voltage gain 6.1 dB NF 60 GHz LNA in 65 nm CMOS with differential output," in Int. Solid-State Circuits Conf. Tech. Dig.. Fukuoka, Japan: , Feb. 2008, pp. 192-193.
    • (2008) Int. Solid-State Circuits Conf. Tech. Dig. , pp. 192-193
    • Weyers, C.1    Mayr, P.2    Kunze, J.W.3    Langmann, U.4
  • 21
    • 72949113644 scopus 로고    scopus 로고
    • A 0.7-V 60-GHz low-power LNA with forward body bias technique in 90 nm CMOS process
    • Paris, France, Sep.
    • W.-H. Lin, J.-H. Tsai, Y.-N. Jen, T.-W. Huang, and H.Wang, "A 0.7-V 60-GHz low-power LNA with forward body bias technique in 90 nm CMOS process," in Eur. Microw. Conf., Paris, France, Sep. 2009, pp. 393-396.
    • (2009) Eur. Microw. Conf. , pp. 393-396
    • Lin, W.-H.1    Tsai, J.-H.2    Jen, Y.-N.3    Huang, T.-W.4    Wang, H.5
  • 24
    • 33645944377 scopus 로고    scopus 로고
    • A noise optimization formulation for CMOS low-noise amplifiers with on-chip low-Q inductors
    • Apr.
    • K.-J. Sun, Z.-M. Tsai, K.-Y. Lin, and H. Wang, "A noise optimization formulation for CMOS low-noise amplifiers with on-chip low-Q inductors," IEEE Trans. Microw. Theory Tech., vol. 54, no. 4, pp. 1554-1560, Apr. 2006.
    • (2006) IEEE Trans. Microw. Theory Tech. , vol.54 , Issue.4 , pp. 1554-1560
    • Sun, K.-J.1    Tsai, Z.-M.2    Lin, K.-Y.3    Wang, H.4
  • 26
    • 1642365005 scopus 로고    scopus 로고
    • 26-42 GHz SOI CMOS low noise amplifier
    • Mar.
    • F. Ellinger, "26-42 GHz SOI CMOS low noise amplifier," IEEE J. Solid-State Circuits, vol. 39, no. 3, pp. 522-528, Mar. 2004.
    • (2004) IEEE J. Solid-State Circuits , vol.39 , Issue.3 , pp. 522-528
    • Ellinger, F.1
  • 27
    • 11944267773 scopus 로고    scopus 로고
    • Millimeter-wave CMOS design
    • Jan.
    • C. H. Doan et al., "Millimeter-wave CMOS design," IEEE J. Solid- State Circuits, vol. 40, no. 1, pp. 144-155, Jan. 2005.
    • (2005) IEEE J. Solid- State Circuits , vol.40 , Issue.1 , pp. 144-155
    • Doan, C.H.1
  • 28
    • 75449094411 scopus 로고    scopus 로고
    • A watt-level stacked-FET linear power amplifier in silicon-on-insulator CMOS
    • Jan.
    • H.-S. Oh, J. Jeong, C. D. Presti, A. Scuderi, and P. M. Asbeck, "A watt-level stacked-FET linear power amplifier in silicon-on-insulator CMOS," IEEE Trans. Microw. Theory Tech., vol. 10, no. 1, pp. 57-64, Jan. 2010.
    • (2010) IEEE Trans. Microw. Theory Tech. , vol.10 , Issue.1 , pp. 57-64
    • Oh, H.-S.1    Jeong, J.2    Presti, C.D.3    Scuderi, A.4    Asbeck, P.M.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.