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IEEE Microwave and Wireless Components Letters

Volumn 15, Issue 7, 2005, Pages 448-450

A 24-GHz 3.9-dB NF low-noise amplifier using 0.18 μm CMOS technology

(5) Shin, Shih Chieh a Tsai, Ming Da a Liu, Ren Chieh a,b Lin, Kun You a Wang, Huei a

a NATIONAL TAIWAN UNIVERSITY (Taiwan)

b M Square Technologies Corporation (Taiwan)

Author keywords

CMOS; K band; Low noise amplifier (LNA); Microwave monolithic integrated circuit (MMIC)

Indexed keywords

CMOS INTEGRATED CIRCUITS; ENERGY UTILIZATION; HETEROJUNCTION BIPOLAR TRANSISTORS; HIGH ELECTRON MOBILITY TRANSISTORS; MICROPROCESSOR CHIPS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; OSCILLATORS (ELECTRONIC); SEMICONDUCTING GALLIUM ARSENIDE; SPURIOUS SIGNAL NOISE; TRANSCONDUCTANCE;

BIAS CURRENT; K-BAND; LOW NOISE AMPLIFIERS (LNA); POLYSILICON RESISTORS;

MICROWAVE AMPLIFIERS;

EID: 23844543104 PISSN: 15311309 EISSN: None Source Type: Journal
DOI: 10.1109/LMWC.2005.851552 Document Type: Article

Times cited : (93)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.