Millimeter-wave integrated circuits in 65-nm CMOS

IEEE Journal of Solid-State Circuits

Volumn 43, Issue 9, 2008, Pages 1991-2002

  Varonen, Mikko ^b   Kärkkäinen, Mikko ^b   Kantanen, Mikko ^c   Halonen, Kari A I ^a,b  

^a IEEE

^b AALTO UNIVERSITY   (Finland)

^c VTT TECHNICAL RESEARCH CENTRE OF FINLAND   (Finland)

Author keywords

65 nm; Amplifiers; Baluns; Downconversion; Millimeterwave integrated circuits; MMICs; Noise parameter measurements; Resistive mixers; Silicon; Slow wave transmission lines; Upconversion

Indexed keywords

AMPLIFIERS (ELECTRONIC); ELECTRONICS INDUSTRY; INTEGRATED CIRCUITS; MILLIMETER WAVES; MIXING; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

65-NM; AMPLIFIERS; BALANCED RESISTIVE MIXER; BALUNS; COMPACT CHIP; COMPRESSION POINTS; DOWNCONVERSION; MEASUREMENT RESULTS; MILLIMETERWAVE INTEGRATED CIRCUITS; MMICS; NOISE-PARAMETER MEASUREMENTS; ON CHIPS; POWER LEVELING; RESISTIVE MIXERS; SILICON; SLOW-WAVE TRANSMISSION LINES; TEST STRUCTURES; TRANSISTOR NOISE; UPCONVERSION;

CMOS INTEGRATED CIRCUITS;

EID: 52249101191     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSSC.2008.2001902     Document Type: Article

References (32)

1. B. Heydari, M. Bohsali, E. Adabi, and A. M. Niknejad, "Low-power mm-wave components up to 104 GHz in 90 nm CMOS," in 2007 IEEE Int. Solid-State Circuits Conf. Dig. Tech Papers, San Francisco, CA, Feb. 2007, pp. 200-201.
2. C.-M. Lo, C.-S. Lin, and H. Wang, "A miniature V-band 3-stage cascode LNA in 0.13 μm CMOS," in 2006 IEEE Int. Solid-State Circuits Conf Dig. Tech Papers, San Francisco, CA, Feb. 2006, pp. 322-323.
3. J.-H. Tsai, W.-C. Chen, T.-P. Wang, T.-W. Huang, and H. Wang, "A miniature Q-band low noise amplifier using 0.13- μm CMOS technology," IEEE Microw. Wireless Compon. Lett., vol. 16, pp. 327-329, Jun. 2006.
4. T. Yao, M. Gordon, K. Yau, M. T. Yang, and S. P. Voinigescu, "60-GHz PA and LNA in 90-nm RF-CMOS," in 2006 IEEE Radio Frequency Integrated Circuits Symp. Dig., San Francisco, CA, Jun. 2006, pp. 147-150.
5. M. A. T. Sanduleanu, G. Zhang, and J. R. Long, "3.1-34 GHz low noise amplifier with on-chip microstrip lines and inter-stage matching in 90-nm baseline CMOS," in 2006 IEEE Radio Frequency Integrated Circuits Symp. Dig., San Francisco, CA, Jun. 2006, pp. 143-146.
6. B. Razavi, "A mm-wave CMOS heterodyne receiver with on-chip LO and divider," in 2007 IEEE Int. Solid-State Circuits Conf. Dig. Tech. Papers, San Francisco, CA, Feb. 2007, pp. 188-189.
7. S. Emami, C. H. Doan, A. M. Niknejad, and R. W. Brodersen, "A highly integrated 60 GHz CMOS front-end receiver," in 2007 IEEE Int. Solid-State Circuits Conf. Dig. Tech. Papers, San Francisco, CA, Feb. 2007, pp. 190-191.
8. D. Alldred, B. Cousins, and S. P. Voinigescu, "A 1.2 V, 60-GHz radio receiver with on-chip transformers and inductors in 90-nm. CMOS," in 2006 IEEE Compound Semiconductor Integrated Circuit Symp. Dig., San Antonio, TX, Nov. 2006, pp. 51-54.
9. B. Razavi, "CMOS transceivers for the 60-GHz band," in 2006 IEEE Radio Frequency Integrated Circuits Symp. Dig., San Francisco, CA, Jun. 2006, pp. 231-234.
10. C.-H. Wang, H.-Y. Chang, P.-S. Wu, K.-Y. Lin, T.-W. Huang, H. Wang, and C. H. Chen, "A 60 GHz low-power six-port transceiver for gigabit software-defined transceiver applications," in 2007 IEEE Int. Solid-State Circuits Conf. Dig. Tech. Papers, San Francisco, CA, Feb. 2007, pp. 192-193.
11. M. Varonen, M. Kärkkäinen, and K. A. I. Halonen, "V-band balanced resistive mixer in 65-nm CMOS," in Proc. IEEE European Solid-State Circuit Conf., Munich, Germany, Sep. 2007, pp. 360-363.
12. M. Varonen, M. Kärkkäinen, and K. A. I. Halonen, "Millimeter-wave amplifiers in 65-nm CMOS," in Proc. IEEE European Solid-State Circuit Conf., Munich, Germany, Sep. 2007, pp. 280-283.
13. M. C. A. M. Koolen, J. A. M. Geelen, and M. P. J. G. Versleijen, "An improved de-embedding technique for on-wafer high-frequency characterization," in Proc. IEEE Bipolar Circuits and Technology Meeting, Minneapolis, MN, Sep. 1991, pp. 188-191.
14. H. Hillbrand and P. H. Russer, "An efficient method for computer aided noise analysis of linear amplifier networks," IEEE Trans. Circuits Syst., vol. CAS-23, pp. 235-238, Apr. 1976.
15. M. Kantanen, M. Lahdes, T. Vähä-Heikkilä, and J. Tuovinen, "A wide-band on-wafer noise parameter measurement system at 50-75 GHz," IEEE Trans. Microw. Theory Tech., vol. 51, no. 5, pp. 1489-1495, May 2003.
16. T. S. D. Cheung and J. Long, "Shielded passive devices for silicon-based monolithic microwave and millimeter-wave integrated circuits," IEEE J. Solid-State Circuits, vol. 41, no. 5, pp. 1183-1200, May 2006.
17. W. R. Eisenstadt and Y. Eo, "S-parameter-based IC interconnect transmission line characterization," IEEE Trans. Comp., Hybrids, Manufact. Technol., vol. 15, pp. 483-490, Aug. 1992.
18. S. Maas, M. Kintis, F. Fong, and M. Tan, "A broadband planar monolithic ring mixer," in 1999 IEEE Microwave and Millimeter-Wave Monolithic Circuits Symp. Dig., San Francisco, CA, Jun. 1996, pp. 51-54.
19. T. Vähä-Heikkilä, M. Lahdes, M. Kantanen, T. Karttaavi, and J. Tuovinen, "Very wideband automated on-wafer noise figure and gain measurements at 50-1.10 GHz," in Proc. 2002 European Gallium Arsenide and Related III-V Compounds and Application Symp., Milan, Italy, Sep. 2002, pp. 233-236.
20. H. Shigematsu, T. Hirose, F. Brewer, and M. Rodwell, "Millimeter- wave CMOS circuit design," IEEE Trans. Microwave Theory Tech., pp. 472-477, Feb. 2005.
21. C. H. Doan, S. Emami, A. M. Niknejad, and R. W. Brodersen, "Millimeter-wave CMOS design," IEEE J. Solid-State Circuits, vol. 40, no. 1, pp. 144-155, Jan. 2005.
22. M. A. Masud, H. Zirath, M. Ferndahl, and H.-O. Vickes, "90 nm CMOS MMIC amplifier," in 2004 IEEE Radio Frequency Integrated Circuits Symp. Dig., Fort Worth, TX, Jun. 2004, pp. 201-204.
23. F. Ellinger, "26-42 GHz SOI CMOS low noise amplifier," IEEE J. Solid-State Circuits, vol. 39, no. 3, pp. 522-528, Mar. 2004.
24. S. Montusclat, F. Gianesello, and D. Gloria, "Silicon full integrated LNA, filter and antenna system beyond 40 GHz for MMW wireless communication links in advanced CMOS technologies," in 2006 IEEE Radio Frequency Integrated Circuits Symp. Dig., San Francisco, CA, Jun. 2006, pp. 93-96.
25. S. Maas, "A GaAS MESFET mixer with very low intermodulation," IEEE Trans. Microwave Theory Tech., vol. 35, no. 4, pp. 425-429, Apr. 1987.
26. S. Maas, "A GaAs MESFET balanced mixer with very low intermodulation," in IEEE MTT-S Int. Microwave Symp. Dig., Las Vegas, NV, Jun. 1987, pp. 895-898.
27. J.-H. Tsai, P.-S. Wu, C.-S Lin, T.-W. Huang, J. G. J. Chern, and W.-C. Huang, "A 25-75 GHz broadband Gilbert-cell mixer using 90-nm CMOS technology," IEEE Microw. Wireless Compon. Lett., vol. 17, no. 4, pp. 247-249, Apr. 2007.
28. I. C. H. Lai, Y. Kambayashi, and M. Fujishima, "60-GHz CMOS down-conversion mixer with slow-wave matching transmission lines," in Proc. 2006 Asian Solid-State Circuits Conf., Hangzhou, China, Nov. 2006, pp. 195-198.
29. F. Zhang, E. Skafidas, and W. Shieh, "A 60-GHz double-balanced Gilbert cell, down-conversion mixer on 130-nm CMOS," in 2007 IEEE Radio Frequency Integrated Circuits Symp. Dig., Honolulu, HI, Jun. 2007, pp. 141-144.
30. S. Emami, C. H. Doan, A. M. Niknejad, and R. W. Brodersen, "A 60-GHz down-converting CMOS single-gate mixer," in 2005 IEEE Radio Frequency Integrated Circuits Symp. Dig., Long Beach, CA, Jun. 2005, pp. 163-166.
31. B. M. Motlagh, S. E. Gunnarsson, M. Ferndahl, and H. Zirath, "Fully integrated 60-GHz single-ended resistive mixer in 90-nm. CMOS technology," IEEE Microw. Wireless Compon. Lett., vol. 16, pp. 25-27, Jan. 2006.
32. P.-C. Huang, R.-C. Liu, J.-H. Tsai, H.-Y. Chang, H. Wang, J. Yeh, C.-Y. Lee, and J. Chern, "A compact 35-65 GHz up-conversion mixer with integrated broadband transformers in 0.18-mm. SiGe BiCMOS technology," in 2006 IEEE Radio Frequency Integrated Circuits Symp. Dig., San Francisco, CA, Jun. 2006, pp. 243-246.