Wideband PA and LAN for 60-GHz Radio in 90-nm LP CMOS technology

2008 IEEE CSIC Symposium: GaAs ICs Celebrate 30 Years in Monterey, Technical Digest 2008

Volumn , Issue , 2008, Pages

  Lin, Jau Jr ^a   To, Kun Hin ^a   Brown, Bill ^a   Hammock, Donna ^a   Majerus, Michael ^a   Tutt, Marcel ^a   Huang, W Margaret ^a  

^a FREESCALE SEMICONDUCTOR INC   (United States)

Author keywords

CMOS; IEEE 802.15; Lna and pa; WPAN

Indexed keywords

AUDIO FREQUENCY AMPLIFIERS; CMOS INTEGRATED CIRCUITS; GALLIUM ALLOYS; LOCAL AREA NETWORKS; LOW NOISE AMPLIFIERS; REFLECTION; SEMICONDUCTING GALLIUM; TELECOMMUNICATION SYSTEMS;

BACKEND PROCESSES; BANDWIDTH REQUIREMENTS; CMOS; CMOS TECHNOLOGIES; IEEE 802.15; INPUT AND OUTPUTS; LNA AND PA; LOW POWERS; LP CMOS; PEAK GAINS; REFLECTION COEFFICIENTS; SATURATED OUTPUT POWERS; WIDE BANDS; WPAN;

BANDWIDTH;

EID: 57849135150     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/CSICS.2008.32     Document Type: Conference Paper

References (15)

1. IEEE 802.15 WPAN Website, http://www.ieee802.org/15/pub/tg3c CFPdoe&proposal.html
2. A. Fujihara et al., "High performance 60-GHz coplanar MMIC LNA using InP heterojunction FET's with AlAs/InAs superlattice layer, "IEEE Int. Microwave Symp., pp. 21-24, Jun. 2000.
3. K. Ohata et al, "Wireless 1.25Gb/s Transceiver Module at 60GHzBand," IEEE1SSCC, pp. 298-299, Feb. 2002.
4. S. Reynolds et al, "60GHz transceiver circuits in SiGe bipolar technology," IEEE ISSCC, pp. 442-538, Feb. 2004.
5. K. To et al, "60GHz LNA and 15GHz VCO Design for Use in Broadband Millimeter-Wave WPAN System," IEEE BCTM, pp. 210-213, Sept. 2007.
6. T. Yao, et al., "Algorithmic Design of CMOS LNAs and PAs for 60-GHz Radio", IEEE JSSC, pp. 1044-1057, Vol. 42, Issue 5, May 2007.
7. Y. Jin et al, "A millimeter-wave power amplifier with 25dB power gain and +8dBm saturated output power," IEEE ESSCIRC, pp. 276-79, Sept. 2007.
8. B. Heydari et al, "A 60 GHz Power Amplifier in 90nm CMOS Technology," IEEE CICC, pp. 769-772, Sept. 2007.
9. M. Klianpour et al, "A High-Gain, Low-Noise, +6dBm PA in 90nm CMOS for 60-GHz Radio," IEEE CSICS, pp. 121-124, Oct. 2007.
10. M Tanomura et al, "TX and RX Front-Ends for the 60GHz Band in 90nm Standard Bulk CMOS," IEEE ISSCC, pp. 558-559, Feb. 2008.
11. T. Suzuki et al, "60 and 77GHz Power Amplifiers in Standard 90nm CMOS," IEEE ISSCC, pp. 562-563, Feb. 2008.
12. D. Chowdhury et al, "A 60GHz IV +12.3dBm Transformer-Coupled Wideband PA in 90nm CMOS," IEEE ISSCC, pp. 560-561, Feb. 2008.
13. ITRS Website, http://www.itrs.net
14. C. Cao et al, "An 18-GHz, 10.9-dBm Fully-Integrated Power Amplifier with 23.5% PAE in 130-nm CMOS," IEEE ESSCIRC, pp. 137-140, Sept. 2005.
15. M.L. Edwards et al, "A new criterion for linear 2-port stability using a single geometrically derived parameter," IEEE Trans. On Microwave Theory and Techniques, pp. 2303-2311, Vol. 40, NO. 12, Dec. 1992.