High-mobility pentacene phototransistor with nanostructured SiO2 gate dielectric synthesized by sol-gel method

Microelectronic Engineering

Volumn 87, Issue 4, 2010, Pages 635-640

  Okur, S ^a   Yakuphanoglu, F ^b   Stathatos, E ^c  

^a IZMIR INSTITUTE OF TECHNOLOGY   (Turkey)

^b FIRAT UNIVERSITY   (Turkey)

^c TECHNOLOGICAL EDUCATIONAL INSTITUTE OF PATRAS   (Greece)

Author keywords

Interface state density; Nanostructured SiO2 insulating gate; Organic semiconductor; Pentacene; Phototransistor; Sol gel method; Thin film phototransistor

Indexed keywords

INTERFACE STATE DENSITY; NANO-STRUCTURED; NANOSTRUCTURED SIO2 INSULATING GATE; ORGANIC SEMICONDUCTOR; PENTACENES; SOL-GEL METHOD; SOL-GEL METHODS;

GATE DIELECTRICS; GATES (TRANSISTOR); GELS; SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SOL-GEL PROCESS; SOL-GELS; SOLS; THIN FILM TRANSISTORS; THIN FILMS;

PHOTOTRANSISTORS;

EID: 75449094835     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.08.029     Document Type: Article

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