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Applied Physics A: Materials Science and Processing

Volumn 98, Issue 2, 2010, Pages 357-365

The effects of deposition temperature and ambient on the physical and electrical performance of DC-sputtered n-ZnO/p-Si heterojunction

(6) Chen, Tao a Liu, Shu Yi a Xie, Qi a Detavernier, Christophe b Van Meirhaeghe, R L b Qu, Xin Ping a

a FUDAN UNIVERSITY (China)

b GHENT UNIVERSITY (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIENTS; CRYSTALLINITIES; CURRENT-VOLTAGE MEASUREMENTS; DEPOSITION CONDITIONS; DEPOSITION PARAMETERS; DEPOSITION PROCESS; DEPOSITION TEMPERATURES; DIRECT CURRENT MAGNETRON SPUTTERING; ELECTRICAL PERFORMANCE; ELECTRICAL PROPERTY; GLASS SUBSTRATES; HIGH TEMPERATURE; OHMIC BEHAVIOR; RECTIFYING BEHAVIORS; REVERSE BIAS; ROOM TEMPERATURE; SPACE-CHARGE-LIMITED CURRENT; SUBSTRATE TEMPERATURE; TEMPERATURE-INSENSITIVE; TUNNELING CURRENT; ZNO FILMS; ZNO/P-SI;

CARRIER CONCENTRATION; DISTILLATION; ELECTRIC PROPERTIES; METALLIC FILMS; SEMICONDUCTING ZINC COMPOUNDS; SILICON; STOICHIOMETRY; SUBSTRATES; ZINC OXIDE;

HETEROJUNCTIONS;

EID: 72149131468 PISSN: 09478396 EISSN: 14320630 Source Type: Journal
DOI: 10.1007/s00339-009-5386-9 Document Type: Article

Times cited : (55)

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