Characteristics of current-injected GaN-based vertical-cavity surface-emitting lasers

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 17, Issue 6, 2011, Pages 1594-1602

  Lu, Tien Chang ^a   Wu, Tzeng Tsong ^a   Chen, Shih Wei ^a   Tu, Po Min ^a   Li, Zhen Yu ^a   Chen, Chien Kang ^a   Chen, Cheng Hung ^a   Kuo, Hao Chung ^a   Wang, Shing Chung ^a   Zan, Hsiao Wen ^a   Chang, Chun Yen ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Distributed Bragg reflectors (DBRs); GaN; vertical cavity surface emitting laser (VCSEL)

Indexed keywords

ALN; CONTINUOUS WAVE OPERATION; COUPLING FACTOR; DBR; EMISSION WAVELENGTH; FABRICATION TECHNOLOGIES; GAN; INGAN/GAN MULTI-QUANTUM WELL; LASER CHARACTERISTICS; LASER THRESHOLD CURRENT; LASING ACTION; OPTICAL CAVITIES; PERFORMANCE CHARACTERISTICS; ROOM TEMPERATURE; TEMPERATURE DEPENDENT; VERTICAL-CAVITY SURFACE EMITTING LASER;

DISTRIBUTED BRAGG REFLECTORS; GALLIUM ALLOYS; GALLIUM NITRIDE; MICROOPTICS; OPTICAL WAVEGUIDES; REFLECTION; SILICON COMPOUNDS; SURFACE EMITTING LASERS; TANTALUM OXIDES;

DBR LASERS;

EID: 83555161631     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2011.2116771     Document Type: Review

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