Improvement in lasing characteristics of GaN-based vertical-cavity surface-emitting lasers fabricated using a GaN substrate

Applied Physics Express

Volumn 2, Issue 5, 2009, Pages

  Omae, Kunimichi ^a   Higuchi, Yu ^a   Nakagawa, Kyosuke ^a   Matsumura, Hiroaki ^a   Mukai, Takashi ^a  

^a NICHIA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAVITY LENGTH; GAN SUBSTRATE; LASING CHARACTERISTICS; MAXIMUM OUTPUT POWER; SAPPHIRE SUBSTRATES; SI SUBSTRATES; THRESHOLD CURRENTS; VERTICAL-CAVITY SURFACE EMITTING LASER;

CORUNDUM; FABRICATION; GALLIUM NITRIDE; LASERS; SAPPHIRE; SEMICONDUCTING GALLIUM; SUBSTRATES; SURFACE EMITTING LASERS;

GALLIUM ALLOYS;

EID: 66949145743     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.2.052101     Document Type: Article

References (8)

1. T. C. Lu, C. C. Kao, J. C. Kuo, G. S. Huang, and S. C. Wang: Appl. Phys. Lett. 92 (2008) 141102.
2. Y. Higuchi, K. Omae, H. Matsumura, and T. Mukai: Appl. Phys. Express 1 (2008) 121102.
3. H. Matsubara, S. Yoshimoto, H. Saito, Y. Jianglin, Y. Tanaka, and S. Noda: Science 319 (2008) 445.
4. Y.-K. Song, M. Diagne, H. Zhou, A. V. Nurmikko, R. P. Schneider, Jr., and T. Takeuchi: Appl. Phys. Lett. 77 (2000) 1744.
5. M. K. Kelly, O. Ambacher, R. Dimitrov, R. Handschuh, and M. Stutzmann: Phys. Status Soldi A 159 (1997) R3.
6. W. S. Wong, T. Sands, N. W. Cheung, M. Kneissl, D. P. Bour, P. Mei, L. T. Romano, and N. M. Johnson: Appl. Phys. Lett. 77 (2000) 2822.
7. M. Kuramoto, C. Sasaoka, Y. Hisanaga, A. Kimura, A. A. Yamaguchi, H. Sunakawa, N. Kuroda, M. Nido, A. Usui, and M. Mizuta: Jpn. J. Appl. Phys. 38 (1999) L184.
8. S. Nagahama, N. Iwasa, M. Senoh, T. Matsushita, Y. Sugimoto, H. Kiyoku, T. Kozaki, M. Sano, H. Matsumura, H. Umemoto, K. Chocho, and T. Mukai: Jpn. J. Appl. Phys. 39 (2000) L647.