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Volumn 1, Issue 12, 2008, Pages 1211021-1211023
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Room-temperature CW lasing of a GaN-based vertical-cavity surface-emitting laser by current injection
a
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Author keywords
[No Author keywords available]
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Indexed keywords
CORUNDUM;
GALLIUM ALLOYS;
GALLIUM NITRIDE;
LASERS;
NIOBIUM;
OPTICAL WAVEGUIDES;
QUANTUM WELL LASERS;
SEMICONDUCTING GALLIUM;
SEMICONDUCTING INDIUM;
SEMICONDUCTOR LASERS;
SILICON COMPOUNDS;
SUBSTRATES;
TIN;
TITANIUM COMPOUNDS;
WAFER BONDING;
ACTIVE LAYERS;
ACTIVE REGIONS;
CAVITY SURFACES;
CURRENT INJECTIONS;
CW LASING;
CW OPERATIONS;
EMISSION WAVELENGTHS;
INDIUM TIN OXIDE LAYERS;
INGAN/GAN QUANTUM WELLS;
OPTICAL CAVITIES;
ROOM TEMPERATURES;
SAPPHIRE SUBSTRATES;
SEMICONDUCTOR LAYERS;
SI SUBSTRATES;
THRESHOLD CURRENTS;
SURFACE EMITTING LASERS;
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EID: 57649156061
PISSN: 18820778
EISSN: 18820786
Source Type: Journal
DOI: 10.1143/APEX.1.121102 Document Type: Article |
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Times cited : (156)
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References (9)
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