Continuous wave operation of current injected GaN vertical cavity surface emitting lasers at room temperature

Applied Physics Letters

Volumn 97, Issue 7, 2010, Pages

  Lu, Tien Chang ^a   Chen, Shih Wei ^a   Wu, Tzeng Tsong ^a   Tu, Po Min ^a   Chen, Chien Kang ^a   Chen, Cheng Hung ^a   Li, Zhen Yu ^a   Kuo, Hao Chung ^a   Wang, Shing Chung ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; CONTINUOUS WAVE OPERATION; COUPLING EFFICIENCY; DBR; DEGREE OF POLARIZATION; DIVERGENCE ANGLE; ELECTRON BLOCKING LAYER; INGAN/GAN MULTI-QUANTUM WELL; LASER STRUCTURES; LASING WAVELENGTH; OPTICAL CAVITIES; ROOM TEMPERATURE; THRESHOLD CURRENTS; TURN ON VOLTAGE; VERTICAL CAVITY SURFACE EMITTING LASER;

GALLIUM ALLOYS; GALLIUM NITRIDE; LASER PULSES; SILICON COMPOUNDS; SURFACE EMITTING LASERS; TANTALUM;

CONTINUOUS WAVE LASERS;

EID: 77956049386     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3483133     Document Type: Article

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