SCOPUS 정보 검색 플랫폼

Applied Physics Letters

Volumn 98, Issue 11, 2011, Pages

Low resistance Ti/Au contacts to amorphous gallium indium zinc oxides

(5) Kim, Hyunsoo a Kim, Kyoung Kook b Lee, Sung Nam b Ryou, Jae Hyun c Dupuis, Russell D c

a Chonbuk National University (South Korea)

b Korea Polytechnic University (South Korea)

c GEORGIA INSTITUTE OF TECHNOLOGY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMBINED EFFECT; ELECTRON CONCENTRATION; ELEVATED TEMPERATURE; GALLIUM INDIUM ZINC OXIDES; INTERFACIAL REACTIONS; LOW RESISTANCE; SPECIFIC CONTACT RESISTANCES; TRANSMISSION LINE METHODS;

GALLIUM; HALL MOBILITY; INDIUM; OXYGEN; OXYGEN VACANCIES; ZINC; ZINC OXIDE;

GALVANOMAGNETIC EFFECTS;

EID: 79952941413 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3567796 Document Type: Article

Times cited : (31)

References (15)

1
- 9744248669
- Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
- DOI 10.1038/nature03090
- K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, Nature (London) 0028-0836 432, 488 (2004). 10.1038/nature03090 (Pubitemid 39585210)
- (2004) Nature , vol.432 , Issue.7016 , pp. 488-492
- Nomura, K.¹ Ohta, H.² Takagi, A.³ Kamiya, T.⁴ Hirano, M.⁵ Hosono, H.⁶

2
- 78149439156
- T. Kamiya and H. Hosono, NPG Asia Mater. 2, 15 (2010).
- (2010) NPG Asia Mater. , vol.2 , pp. 15
- Kamiya, T.¹ Hosono, H.²

3
- 41949130354
- Gallium-indium-zinc-oxide-based thin-film transistors: Influence of the source/drain material
- DOI 10.1109/TED.2008.916717
- P. Barquinha, A. M. Vil̀, G. Goņalves, L. Pereira, R. Martins, J. R. Morante, and E. Fortunato, IEEE Trans. Electron Devices 0018-9383 55, 954 (2008). 10.1109/TED.2008.916717 (Pubitemid 351512956)
- (2008) IEEE Transactions on Electron Devices , vol.55 , Issue.4 , pp. 954-960
- Barquinha, P.¹ Vila, A.M.² Goncalves, G.³ Pereira, L.⁴ Martins, R.⁵ Morante, J.R.⁶ Fortunato, E.⁷

4
- 44249094185
- Specific contact resistances between amorphous oxide semiconductor In-Ga-Zn-O and metallic electrodes
- DOI 10.1016/j.tsf.2007.10.051, PII S0040609007017270
- Y. Shimura, K. Nomura, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, Thin Solid Films 0040-6090 516, 5899 (2008). 10.1016/j.tsf.2007.10.051 (Pubitemid 351726028)
- (2008) Thin Solid Films , vol.516 , Issue.17 , pp. 5899-5902
- Shimura, Y.¹ Nomura, K.² Yanagi, H.³ Kamiya, T.⁴ Hirano, M.⁵ Hosono, H.⁶

5
- 77956058045
- 0040-6090, 10.1016/j.tsf.2010.02.073
- H. -S. Bae, J. -H. Kwon, S. Chang, M. -H. Chung, T. -Y. Oh, J. -H. Park, S. Y. Lee, J. J. Pak, and B. -K. Ju, Thin Solid Films 0040-6090 518, 6325 (2010). 10.1016/j.tsf.2010.02.073
- (2010) Thin Solid Films , vol.518 , pp. 6325
- Bae, H.-S.¹ Kwon, J.-H.² Chang, S.³ Chung, M.-H.⁴ Oh, T.-Y.⁵ Park, J.-H.⁶ Lee, S.Y.⁷ Pak, J.J.⁸ Ju, B.-K.⁹

6
- 77956061676
- 0040-6090, 10.1016/j.tsf.2010.02.044
- W. -S. Kim, Y. -K. Moon, K. -T. Kim, J. -H. Lee, B. -D. Ahn, and J. -W. Park, Thin Solid Films 0040-6090 518, 6357 (2010). 10.1016/j.tsf.2010.02.044
- (2010) Thin Solid Films , vol.518 , pp. 6357
- Kim, W.-S.¹ Moon, Y.-K.² Kim, K.-T.³ Lee, J.-H.⁴ Ahn, B.-D.⁵ Park, J.-W.⁶

7
- 79952949325
- The etching rate of a-GIZO film using BOE was 100 nm/min
- The etching rate of a-GIZO film using BOE was 100 nm/min.

8
- 0004071496
- 3rd ed. (Wiley, New Jersey)
- D. K. Schroder, Semiconductor Material and Device Characterization, 3rd ed. (Wiley, New Jersey, 2006).
- (2006) Semiconductor Material and Device Characterization
- Schroder, D.K.¹

9
- 0003961637
- 6th ed. (Prentice Hall, New Jersey)
- B. G. Streetman and S. K. Banerjee, Solid State Electronic Devices, 6th ed. (Prentice Hall, New Jersey, 2006).
- (2006) Solid State Electronic Devices
- Streetman, B.G.¹ Banerjee, S.K.²

10
- 54249107297
- 0031-8965, 10.1002/pssa.200778936
- K. Nomura, T. Kamiya, H. Ohta, K. Shimizu, M. Hirano, and H. Hosono, Phys. Status Solidi A 0031-8965 205, 1910 (2008). 10.1002/pssa.200778936
- (2008) Phys. Status Solidi A , vol.205 , pp. 1910
- Nomura, K.¹ Kamiya, T.² Ohta, H.³ Shimizu, K.⁴ Hirano, M.⁵ Hosono, H.⁶

11
- 43049114999
- 0022-3093, 10.1016/j.jnoncrysol.2007.10.071
- H. Hosono, K. Nomura, Y. Ogo, T. Uruga, and T. Kamiya, J. Non-Cryst. Solids 0022-3093 354, 2796 (2008). 10.1016/j.jnoncrysol.2007.10.071
- (2008) J. Non-Cryst. Solids , vol.354 , pp. 2796
- Hosono, H.¹ Nomura, K.² Ogo, Y.³ Uruga, T.⁴ Kamiya, T.⁵

12
- 0000082345
- 0003-6951, 10.1063/1.1308527
- H. -K. Kim, S. -H. Han, and T. -Y. Seong, Appl. Phys. Lett. 0003-6951 77, 1647 (2000). 10.1063/1.1308527
- (2000) Appl. Phys. Lett. , vol.77 , pp. 1647
- Kim, H.-K.¹ Han, S.-H.² Seong, T.-Y.³

13
- 0004177869
- 2nd ed. (IFI/Plenum, New York)
- G. V. Samsonov, The Oxide Handbook, 2nd ed. (IFI/Plenum, New York, 1982).
- (1982) The Oxide Handbook
- Samsonov, G.V.¹

14
- 5444268548
- 0003-6951, 10.1063/1.1788897
- K. Nomura, T. Kamiya, H. Ohta, K. Ueda, M. Hirano, and H. Hosono, Appl. Phys. Lett. 0003-6951 85, 1993 (2004). 10.1063/1.1788897
- (2004) Appl. Phys. Lett. , vol.85 , pp. 1993
- Nomura, K.¹ Kamiya, T.² Ohta, H.³ Ueda, K.⁴ Hirano, M.⁵ Hosono, H.⁶

15
- 33846011101
- Hydrogen multicentre bonds
- DOI 10.1038/nmat1795, PII NMAT1795
- A. Janotti and C. G. Van de Walle, Nature Mater. 1476-1122 6, 44 (2007). 10.1038/nmat1795 (Pubitemid 46041475)
- (2007) Nature Materials , vol.6 , Issue.1 , pp. 44-47
- Janotti, A.¹ Van De Walle, C.G.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.