Antimony as a proper candidate for low-temperature solid phase epitaxially activated n+/p junctions

Electrochemical and Solid-State Letters

Volumn 7, Issue 10, 2004, Pages

  Tavakoli, Shahram Ghanad ^a   Baek, Sungkweon ^a   Chang, Hyo Sik ^a   Moon, Dae Won ^b   Hwang, Hyunsang ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b Korea Research Institute of Standards and Science   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONY; CARRIER CONCENTRATION; ELECTROMAGNETIC WAVE SCATTERING; EPITAXIAL GROWTH; FIELD EFFECT TRANSISTORS; LEAKAGE CURRENTS; MOSFET DEVICES; OPTICAL RESOLVING POWER; RAPID THERMAL ANNEALING; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; TRANSMISSION ELECTRON MICROSCOPY;

CONSTITUTIONAL SUPERCOOLING (CSC); ELEMENTAL MAPPING; MEDIUM-ENERGY ION BACKSCATTERING SPECTROSCOPY (MEIS); TRANSIENT ENHANCED DIFFUSIONS (TED);

SEMICONDUCTOR JUNCTIONS;

EID: 8344265302     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1789833     Document Type: Article

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