Characterization of profiling techniques for ultralow energy arsenic implants

Electrochemical and Solid-State Letters

Volumn 4, Issue 1, 2001, Pages

  Kasnavi, Reza ^a   Sun, Yun ^b   Mount, Gary ^c   Pianetta, Piero ^b   Griffin, Peter B ^a   Plummer, James D ^a,d  

^a Stanford University   (United States)

^b SLAC NATIONAL ACCELERATOR LABORATORY   (United States)

^c CHARLES EVANS AND ASSOCIATES   (United States)

^d ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ETCHING; ION IMPLANTATION; OXIDATION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON; X RAY PHOTOELECTRON SPECTROSCOPY;

DECONVOLUTION; MONOLAYER CHEMICAL OXIDATION; ULTRALOW ENERGY ARSENIC IMPLANTS; ULTRALOW ENERGY PRIMARY ION BEAM;

ARSENIC;

EID: 0035131454     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1344284     Document Type: Article

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