Production of shallow ion-implanted layers using rapid electron-beam annealing under the condition of transient-enhanced outdiffusion

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 1, 2000, Pages 454-457

  Kagadei, V A ^a   Proskurovsky, D I ^b  

^a Research Institute of Semiconductor Devices   (Russian Federation)

^b INSTITUTE OF HIGH CURRENT ELECTRONICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONY; ARSENIC; ION IMPLANTATION; PHOSPHORUS; POSITIVE IONS; RAPID THERMAL ANNEALING; SEMICONDUCTING SILICON; VACUUM APPLICATIONS;

OUTDIFFUSION; VACUUM RAPID THERMAL ANNEALING;

INTEGRATED CIRCUIT MANUFACTURE;

EID: 0033698994     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591210     Document Type: Article

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