Formation of shallow source/drain extensions for metal-oxide-semiconductor field-effect-transistors by antimony implantation

Applied Physics Letters

Volumn 82, Issue 5, 2003, Pages 826-828

  Rucker H ^a   Heinemann, B ^a   Barth, R ^a   Bolze, D ^a   Melnik, V ^a   Kruger D ^a   Kurps, R ^a  

^a IHP   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONY; ARSENIC; FIELD EFFECT TRANSISTORS; ION IMPLANTATION; LEAKAGE CURRENTS; RAPID THERMAL ANNEALING;

ANTIMONY IMPLANTATION;

CMOS INTEGRATED CIRCUITS;

EID: 0037416018     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1542932     Document Type: Article

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