Dose and dose-rate effects on NPN bipolar junction transistors irradiated at high temperature

IEEE Transactions on Nuclear Science

Volumn 49 III, Issue 3, 2002, Pages 1474-1479

  Boch, J ^a   Saigne F ^a   Maurel, T ^a   Giustino, F ^b   Dusseau, L ^c   Schrimpf, R D ^d   Galloway, K F ^d   David, J P ^e   Ecoffet, R ^f   Fesquet, J ^c   Gasiot, J ^c  

^a UNIVERSITÉ DE REIMS CHAMPAGNE ARDENNE   (France)

^b CERN   (Switzerland)

^c UNIV MONTPELLIER   (France)

^d VANDERBILT UNIVERSITY   (United States)

^e ONERA   (France)

^f CNES   (France)

Author keywords

25 C to 170 C; Annealing; Bipolar transistors; Current gain; Elevated irradiation temperatures; High dose rate irradiation; Interface states; NPN transistors; Optimum temperature irradiation; Oxide trapped charge; Radiation hardness; Radiation responses; Radiation induced current gain degradation; Radiation induced dopant deactivation; Si

Indexed keywords

ANNEALING; BIPOLAR TRANSISTORS; CHARGE CARRIERS; DOSIMETRY; HIGH TEMPERATURE EFFECTS; INTERFACES (MATERIALS); IRRADIATION; RADIATION DAMAGE; SEMICONDUCTING SILICON;

CURRENT GAIN; DOSE-RATE EFFECTS; ELEVATED IRRADIATION TEMPERATURE; OXIDE TRAPPED CHARGE; RADIATION RESPONSES; RADIATION-INDUCED CURRENT GAIN DEGRADATION; RADIATION-INDUCED DOPANT DEACTIVATION;

RADIATION HARDENING;

EID: 0036624640     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2002.1039686     Document Type: Article

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