Synthesis of large-area, few-layer graphene on iron foil by chemical vapor deposition

Nano Research

Volumn 4, Issue 12, 2011, Pages 1208-1214

  Xue, Yunzhou ^a   Wu, Bin ^a   Guo, Yunlong ^a   Huang, Liping ^a   Jiang, Lang ^a   Chen, Jianyi ^a   Geng, Dechao ^a   Liu, Yunqi ^a   Hu, Wenping ^a   Yu, Gui ^a  

^a INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

Author keywords

chemical vapor deposition (CVD) method; field effect transistor (FET); Graphene; iron foil; Raman spectroscopy

Indexed keywords

EID: 83055188086     PISSN: 19980124     EISSN: 19980000     Source Type: Journal    
DOI: 10.1007/s12274-011-0171-4     Document Type: Article

References (32)

1. Novoselov, K. S.; Geim, A. K.; Morozov, S. V.; Jiang, D.; Zhang, Y.; Dubonos, S. V.; Grigorieva, I. V.; Firsov, A. A. Electric field effect in atomically thin carbon films. Science2004, 306, 666-669.
2. Bhaviripudi, S.; Jia, X. T.; Dresselhaus, M. S.; Kong, J. Role of kinetic factors in chemical vapor deposition synthesis of uniform large area graphene using copper catalyst. Nano Lett. 2010, 10, 4128-4133.
3. Wei, D. C.; Liu, Y. Q.; Zhang, H. L.; Huang, L. P.; Wu, B.; Chen, J. Y.; Yu, G. Scalable synthesis of few-layer graphene ribbons with controlled morphologies by a template method and their applications in nanoelectromechanical switches. J. Am. Chem. Soc. 2009, 131, 11147-11154.
4. Lin, Y. M.; Dimitrakopoulos, C.; Jenkins, K. A.; Farmer, D. B.; Chiu, H. Y.; Grill, A.; Avouris, P. 100-GHz transistors from wafer-scale epitaxial graphene. Science2010, 327, 662.
5. Berger, C.; Song, Z. M.; Li, T. B.; Li, X. B.; Ogbazghi, A. Y.; Feng, R.; Dai, Z. T.; Marchenkov, A. N.; Conrad, E. H.; First, P. N.; de Heer, W. A. Ultrathin epitaxial graphite: 2D electron gas properties and a route toward graphene-based nanoelectronics. J. Phys. Chem. B2004, 108, 19912-19916.
6. Sutter, P. W.; Flege, J. I.; Sutter, E. A. Epitaxial graphene on ruthenium. Nat. Mater. 2008, 7, 406-411.
7. Li, X.; Cai, W.; An, J.; Kim, S.; Nah, J.; Yang, D.; Piner, R.; Velamakanni, A.; Jung, I.; Tutuc, E.; Banerjee, S. K.; Colombo, L.; Ruoff, R. S. Large-area synthesis of high-quality and uniform graphene films on copper foils. Science2009, 324, 1312-1314.
8. Kim, K. S.; Zhao, Y.; Jang, H.; Lee, S. Y.; Kim, J. M.; Kim, K. S.; Ahn, J. H.; Kim, P.; Choi, J. Y.; Hong, B. H. Large-scale pattern growth of graphene films for stretchable transparent electrodes. Nature2009, 457, 706-710.
9. Reina, A.; Jia, X.; Ho, J.; Nezich, D.; Son, H.; Bulovic, V.; Dresselhaus, M. S.; Kong, J. Large area, few-layer graphene films on arbitrary substrates by chemical vapor deposition Nano Lett. 2009, 9, 30-35.
10. Reina, A.; Thiele, S.; Jia, X.; Bhaviripudi, S.; Dresselhaus, M. S.; Schaefer, J.; Kong, J. Growth of large-area single- and Bi-layer graphene by controlled carbon precipitation on polycrystalline Ni surfaces. Nano Res. 2009, 2, 509-516.
11. Yu, Q.; Lian, J.; Siriponglert, S.; Li, H.; Chen, Y. P.; Pei, S. S. Graphene segregated on Ni surfaces and transferred to insulators. Appl. Phys. Lett. 2008, 93, 113103.
12. Dikin, D. A.; Stankovich, S.; Zimney, E. J.; Piner, R. D.; Dommett, G. H. B.; Evmenenko, G.; Nguyen, S. T.; Ruoff, R. S. Preparation and characterization of graphene oxide paper. Nature2007, 448, 457-460.
13. Li, X. L.; Wang, X. R.; Zhang, L.; Lee, S. W.; Dai, H. J. Chemically derived, ultrasmooth graphene nanoribbon semi-conductors. Science2008, 319, 1229-1232.
14. Li, X. L.; Zhang, G. Y.; Bai, X. D.; Sun, X. M.; Wang, X. R.; Wang, E. G.; Dai, H. J. Highly conducting graphene sheets and Langmuir-Blodgett films. Nat. Nanotechnol. 2008, 3, 538-542.
15. Wei, D. C.; Liu, Y. Q.; Wang, Y.; Zhang, H. L.; Huang, L. P.; Yu, G. Synthesis of N-doped graphene by chemical vapor deposition and its electrical properties. Nano Lett. 2009, 9, 1752-1758.
16. Chae, S. J.; Gunes, F.; Kim, K. K.; Kim, E. S.; Han, G. H.; Kim, S. M.; Shin, H. J.; Yoon, S. M.; Choi, J. Y.; Park, M. H., et al. Synthesis of large-area graphene layers on poly-nickel substrate by chemical vapor deposition: wrinkle formation. Adv. Mater. 2009, 21, 2328-2333.
17. Ueta, H.; Saida, M.; Nakai, C.; Yamada, Y.; Sasaki, M.; Yamamoto, S. Highly oriented monolayer graphite formation on Pt (111) by a supersonic methane beam. Surf. Sci. 2004, 560, 183-190.
18. Ohta, T.; Bostwick, A.; Seyller, T.; Horn, K.; Rotenberg, E. Controlling the electronic structure of bilayer graphene. Science2006, 313, 951-954.
19. Oostinga, J. B.; Heersche, H. B.; Liu, X. L.; Morpurgo, A. F.; Vandersypen, L. M. K. Gate-induced insulating state in bilayer graphene devices. Nat. Mater. 2008, 7, 151-157.
20. Kondo, D. Y.; Sato, S.; Yagi, K.; Harada, N.; Sato, M.; Nihei, M.; Yokoyama, N. Low-temperature synthesis of graphene and fabrication of top-gated field effect transistors without using transfer processes. Appl. Phys. Express2010, 3, 025102.
21. Guo, K. X. A brief history of metallography: III. Fe-C equilibrium diagram. Mater. Sci. Eng. 2001, 19, 2-8.
22. Wintterlin, J.; Bocquet, M. L. Graphene on metal surfaces. Surf. Sci. 2009, 603, 1841-1852.
23. Wang, X. R.; Ouyang, Y. J.; Li, X. L.; Wang, H. L.; Guo, J.; Dai, H. J. Room-temperature all-semiconducting sub-10-nm graphene nanoribbon field-effect transistors. Phys. Rev. Lett. 2008, 100, 206803.
24. Thomsen, C.; Reich, S. Double resonant Raman scattering in graphite. Phys. Rev. Lett. 2000, 85, 5214-5217.
25. Ferrari, A. C.; Meyer, J. C.; Scardaci, V.; Casiraghi, C.; Lazzeri, M.; Mauri, F.; Piscanec, S.; Jiang, D.; Novoselov, K. S.; Roth, S.; Geim, A. K. Raman Spectrum of Graphene and Graphene Layers. Phys. Rev. Lett. 2006, 97, 187401.
26. Graf, D.; Molitor, F.; Ensslin, K.; Stampfer, C.; Jungen, A.; Hierold, C.; Wirtz, L. Spatially resolved raman spectroscopy of single- and few-layer graphene. Nano Lett. 2007, 7, 238-242.
27. Kajiura, H.; Huang, H.; Tsutsui, S.; Murakami, Y.; Miyakoshi, M. High-purity fibrous carbon deposit on the anode surface in hydrogen DC arc-discharge. Carbon 2002, 40, 2423-2428.
28. Duan, H. G.; Xie, E. Q.; Han, L.; Xu, Z. Turning PMMA nanofibers into graphene nanoribbons by in situ electron beam irradiation. Adv. Mater. 2008, 20, 3284-3288.
29. Lang, J.; Gao, J. H.; Wang, E. J.; Li, H. X.; Wang, Z. H.; Hu, W. P.; Jiang, L. Organic single-crystalline ribbons of a rigid "H"-type anthracene derivative and high-performance, short-channel field-effect transistors of individual micro/nanometer-sized ribbons fabricated by an "organic ribbon mask" technique. Adv. Mater. 2008, 20, 2735-2740.
30. Guo, B. D.; Liu, Q.; Chen, E. D.; Zhu, H. W.; Fang, L.; Gong, J. R. Controllable N-doping of graphene. Nano Lett. 2010, 10, 4975-4980.
31. Gómez-Navarro, C.; Weitz, R. T.; Bittner, A. M.; Scolari, M.; Mews, A.; Burghard, M.; Kern, K. Electronic transport properties of individual chemically reduced graphene oxide sheets. Nano Lett. 2007, 7, 3499-3503.
32. Li, X. S.; Zhu, Y. W.; Cai, W. W.; Borysiak, M.; Han, B. Y.; Chen, D.; Piner, R. D.; Colombo, L.; Ruoff, R. S. Transfer of large-area graphene films for high-performance transparent conductive electrodes. Nano Lett. 2009, 12, 4359-4363.