Pentacene-based low voltage organic field-effect transistors with anodized Ta2O5 gate dielectric

Applied Physics Letters

Volumn 91, Issue 19, 2007, Pages

  Jeong, Yeon Taek ^a   Dodabalapur, Ananth ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FIELD EFFECT TRANSISTORS; LEAKAGE CURRENTS; SURFACE ROUGHNESS; THRESHOLD VOLTAGE;

HEXAMETHYLDISILAZANE (HMDS) TREATMENT; PENTACENE GRAIN SIZE; PENTACENE-BASED LOW VOLTAGE ORGANIC FIELD-EFFECT TRANSISTORS; SATURATION MOBILITY;

GATE DIELECTRICS;

EID: 36048943102     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2806914     Document Type: Article

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