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Applied Physics Letters

Volumn 98, Issue 3, 2011, Pages

Stability of polarization in organic ferroelectric metal-insulator- semiconductor structures

(4) Kalbitz, R a Frubing P a Gerhard, R a Taylor, D M b

a UNIVERSITY OF POTSDAM (Germany)

b BANGOR UNIVERSITY (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

DEPLETION VOLTAGE; DIELECTRIC MEASUREMENTS; FERROELECTRIC POLYMERS; FLAT-BAND VOLTAGE; GATE INSULATOR; METAL INSULATOR SEMICONDUCTOR STRUCTURES; NEGATIVE CHARGE; NEGATIVE SHIFT; ORGANIC METALS; POLARIZATION STATE; SEMICONDUCTOR-INSULATOR INTERFACE; TRIFLUOROETHYLENE;

DIELECTRIC MATERIALS; FERROELECTRICITY; METAL INSULATOR BOUNDARIES; MIS DEVICES; ORGANIC CONDUCTORS; POLARIZATION;

SEMICONDUCTOR INSULATOR BOUNDARIES;

EID: 79251542980 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3543632 Document Type: Article

Times cited : (22)

References (27)

1
- 62649106186
- 10.4028/www.scientific.net/AST.54.491
- C. W. Choi, A. A. Prabu, S. Yoon, Y. M. Kim, and K. J. Kim, Adv. Sci. Technol. (Faenza, Italy) 54, 491 (2008). 10.4028/www.scientific.net/AST.54.491
- (2008) Adv. Sci. Technol. (Faenza, Italy) , vol.54 , pp. 491
- Choi, C.W.¹ Prabu, A.A.² Yoon, S.³ Kim, Y.M.⁴ Kim, K.J.⁵

2
- 33947329967
- 0003-6951, 10.1063/1.2713856
- R. C. G. Naber, J. Massolt, M. Spijkman, K. Asadi, and P. W. M. Blom, Appl. Phys. Lett. 0003-6951 90, 113509 (2007). 10.1063/1.2713856
- (2007) Appl. Phys. Lett. , vol.90 , pp. 113509
- Naber, R.C.G.¹ Massolt, J.² Spijkman, M.³ Asadi, K.⁴ Blom, P.W.M.⁵

3
- 33646120554
- 1566-1199, 10.1016/j.orgel.2005.11.007
- R. C. G. Naber, M. Mulder, B. de Boer, P. W. M. Blom, and D. M. de Leeuw, Org. Electron. 1566-1199 7, 132 (2006). 10.1016/j.orgel.2005.11.007
- (2006) Org. Electron. , vol.7 , pp. 132
- Naber, R.C.G.¹ Mulder, M.² De Boer, B.³ Blom, P.W.M.⁴ De Leeuw, D.M.⁵

4
- 5444271671
- 0003-6951, 10.1063/1.1788885
- R. C. G. Naber and P. W. M. Blom, Appl. Phys. Lett. 0003-6951 85, 2032 (2004). 10.1063/1.1788885
- (2004) Appl. Phys. Lett. , vol.85 , pp. 2032
- Naber, R.C.G.¹ Blom, P.W.M.²

5
- 9944246100
- 0021-8979, 10.1063/1.1785836
- S. H. Lim, A. C. Rastogi, and S. B. Desuc, J. Appl. Phys. 0021-8979 96, 5673 (2004). 10.1063/1.1785836
- (2004) J. Appl. Phys. , vol.96 , pp. 5673
- Lim, S.H.¹ Rastogi, A.C.² Desuc, S.B.³

6
- 67651236742
- 1099-0062, 10.1149/1.3154417
- S. -W. Jung, S. -M. Yoon, S. -Y. Kang, K. -J. Choi, W. -C. Shin, and B. -G. Yu, Electrochem. Solid-State Lett. 1099-0062 12, H325 (2009). 10.1149/1.3154417
- (2009) Electrochem. Solid-State Lett. , vol.12 , pp. 325
- Jung, S.-W.¹ Yoon, S.-M.² Kang, S.-Y.³ Choi, K.-J.⁴ Shin, W.-C.⁵ Yu, B.-G.⁶

7
- 0001571869
- 0021-8979, 10.1063/1.351910
- S. L. Miller and P. J. McWhorter, J. Appl. Phys. 0021-8979 72, 5999 (1992). 10.1063/1.351910
- (1992) J. Appl. Phys. , vol.72 , pp. 5999
- Miller, S.L.¹ McWhorter, P.J.²

8
- 27744512125
- 0003-6951, 10.1063/1.2132062
- R. C. G. Naber, B. de Boer, and P. W. M. Blom, Appl. Phys. Lett. 0003-6951 87, 203509 (2005). 10.1063/1.2132062
- (2005) Appl. Phys. Lett. , vol.87 , pp. 203509
- Naber, R.C.G.¹ De Boer, B.² Blom, P.W.M.³

9
- 33750819972
- 1070-9878.
- D. M. Taylor, IEEE Trans. Dielectr. Electr. Insul. 1070-9878 13, 1063 (2006).
- (2006) IEEE Trans. Dielectr. Electr. Insul. , vol.13 , pp. 1063
- Taylor, D.M.¹

10
- 77951824557
- 0935-9648.
- R. C. G. Naber, K. Asadi, P. W. M. Blom, D. M. de Leeuw, and B. de Boer, Adv. Mater. 0935-9648 21, 1 (2009).
- (2009) Adv. Mater. , vol.21 , pp. 1
- Naber, R.C.G.¹ Asadi, K.² Blom, P.W.M.³ De Leeuw, D.M.⁴ De Boer, B.⁵

11
- 0032511040
- 0036-8075, 10.1126/science.280.5370.1741
- H. Sirringhaus, N. Tesslera, and R. H. Friend, Science 0036-8075 280, 1741 (1998). 10.1126/science.280.5370.1741
- (1998) Science , vol.280 , pp. 1741
- Sirringhaus, H.¹ Tesslera, N.² Friend, R.H.³

12
- 33845798485
- 0021-8979, 10.1063/1.2400796
- S. Cho, K. Lee, J. Yuen, D. Moses, G. Wang, A. J. Heeger, M. Surin, and R. Lazzaroni, J. Appl. Phys. 0021-8979 100, 114503 (2006). 10.1063/1.2400796
- (2006) J. Appl. Phys. , vol.100 , pp. 114503
- Cho, S.¹ Lee, K.² Yuen, J.³ Moses, D.⁴ Wang, G.⁵ Heeger, A.J.⁶ Surin, M.⁷ Lazzaroni, R.⁸

13
- 84939383977
- 0005-8580.
- E. H. Nicollian and A. Goetzberger, Bell Syst. Tech. J. 0005-8580 46, 1055 (1967).
- (1967) Bell Syst. Tech. J. , vol.46 , pp. 1055
- Nicollian, E.H.¹ Goetzberger, A.²

14
- 33750811424
- 1070-9878.
- B. Singh, N. Marjanović, N. S. Sariciftci, R. Schwödiauer, and S. Bauer, IEEE Trans. Dielectr. Electr. Insul. 1070-9878 13, 1082 (2006).
- (2006) IEEE Trans. Dielectr. Electr. Insul. , vol.13 , pp. 1082
- Singh, B.¹ Marjanović, N.² Sariciftci, N.S.³ Schwödiauer, R.⁴ Bauer, S.⁵

15
- 0004005306
- 2nd ed. (Wiley, New York).
- S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1954).
- (1954) Physics of Semiconductor Devices
- Sze, S.M.¹

16
- 0004277486
- (Wiley, New York)
- E. H. Nicollian and J. R. Brews, MOS Physics and Technology (Wiley, New York, 1982), p. 423f.
- (1982) MOS Physics and Technology
- Nicollian, E.H.¹ Brews, J.R.²

17
- 0000865157
- 0021-8979, 10.1063/1.352213
- B. Dickens, E. Balizer, A. S. DeReggi, and S. C. Roth, J. Appl. Phys. 0021-8979 72, 4258 (1992). 10.1063/1.352213
- (1992) J. Appl. Phys. , vol.72 , pp. 4258
- Dickens, B.¹ Balizer, E.² Dereggi, A.S.³ Roth, S.C.⁴

18
- 0020847524
- 0015-0193.
- F. Bauer, Ferroelectrics 0015-0193 49, 231 (1983).
- (1983) Ferroelectrics , vol.49 , pp. 231
- Bauer, F.¹

19
- 0033247563
- 0103-9733, 10.1590/S0103-97331999000200011
- W. Eisenmenger, H. Schmidt, and B. Dehlen, Braz. J. Phys. 0103-9733 29, 295 (1999). 10.1590/S0103-97331999000200011
- (1999) Braz. J. Phys. , vol.29 , pp. 295
- Eisenmenger, W.¹ Schmidt, H.² Dehlen, B.³

20
- 0015626079
- 0021-8979, 10.1063/1.1662513
- G. Pfister, M. Abkowitz, and R. G. Crystal, J. Appl. Phys. 0021-8979 44, 2064 (1973). 10.1063/1.1662513
- (1973) J. Appl. Phys. , vol.44 , pp. 2064
- Pfister, G.¹ Abkowitz, M.² Crystal, R.G.³

21
- 0017947820
- 0098-1273, 10.1002/pol.1978.180160315
- H. Sussner and K. Dransfeld, J. Polym. Sci., Polym. Phys. Ed. 0098-1273 16, 529 (1978). 10.1002/pol.1978.180160315
- (1978) J. Polym. Sci., Polym. Phys. Ed. , vol.16 , pp. 529
- Sussner, H.¹ Dransfeld, K.²

22
- 78049344153
- 0021-4922, 10.1143/JJAP.49.09MC12
- T. Nakajima, M. Nakamura, T. Furukawa, and S. Okamura, Jpn. J. Appl. Phys. 0021-4922 45, 09MC12 (2010). 10.1143/JJAP.49.09MC12
- (2010) Jpn. J. Appl. Phys. , vol.45
- Nakajima, T.¹ Nakamura, M.² Furukawa, T.³ Okamura, S.⁴

23
- 0036646284
- 0741-3106, 10.1109/LED.2002.1015207
- T. P. Ma and J. -P. Han, IEEE Electron Device Lett. 0741-3106 23, 386 (2002). 10.1109/LED.2002.1015207
- (2002) IEEE Electron Device Lett. , vol.23 , pp. 386
- Ma, T.P.¹ Han, J.-P.²

24
- 33750734276
- 0003-6951, 10.1063/1.2382727
- D. M. Taylor, J. A. Drysdale, I. Torres, and O. Fernández, Appl. Phys. Lett. 0003-6951 89, 183512 (2006). 10.1063/1.2382727
- (2006) Appl. Phys. Lett. , vol.89 , pp. 183512
- Taylor, D.M.¹ Drysdale, J.A.² Torres, I.³ Fernández, O.⁴

25
- 15244338556
- 0028-0836, 10.1038/nature03376
- L. -L. Chua, J. Zaumseil, J. -F. Chang, E. C.-W. Ou, P. K.-H. Ho, H. Sirringhaus, and R. H. Friend, Nature (London) 0028-0836 434, 194 (2005). 10.1038/nature03376
- (2005) Nature (London) , vol.434 , pp. 194
- Chua, L.-L.¹ Zaumseil, J.² Chang, J.-F.³ Ou, E.C.-W.⁴ Ho, P.K.-H.⁵ Sirringhaus, H.⁶ Friend, R.H.⁷

26
- 3242890574
- 0003-6951, 10.1063/1.1769081
- I. Torres, M. Taylor, and E. Itoh, Appl. Phys. Lett. 0003-6951 85, 314 (2004). 10.1063/1.1769081
- (2004) Appl. Phys. Lett. , vol.85 , pp. 314
- Torres, I.¹ Taylor, M.² Itoh, E.³

27
- 40849088204
- 0003-6951, 10.1063/1.2897238
- N. Alves and D. M. Taylor, Appl. Phys. Lett. 0003-6951 92, 103312 (2008). 10.1063/1.2897238
- (2008) Appl. Phys. Lett. , vol.92 , pp. 103312
- Alves, N.¹ Taylor, D.M.²

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