Electronic structure of bulk and defect α- and γ-Al2O3

Microelectronic Engineering

Volumn 86, Issue 7-9, 2009, Pages 1915-1917

  Perevalov, T V ^a   Shaposhnikov, A V ^a   Gritsenko, V A ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

Alumina; Defect; High k

Indexed keywords

ELECTRON AND HOLE TRAPS; FIRST-PRINCIPLE; HIGH-K; HIGH-K DIELECTRIC;

ALUMINUM; DEFECTS; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; OXYGEN; VACANCIES;

OXYGEN VACANCIES;

EID: 67349216149     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.03.006     Document Type: Article

References (12)

1. Robertson J. Eur. Phys. J. Appl. Phys. 28 (2004) 265
2. Guha S., Cartier E., Bojarczuk N.A., Bruley J., Gignac L., et al. J. Appl. Phys. 90 (2001) 1
3. Gritsenko V.A., Nasyrov K.A., Novikov Y.N., et al. Solid State Electron. 47 (2003) 1651
4. Lee C.H., Park K.C., and Kim K. Appl. Phys. Lett. 87 (2005) 073510
5. Lisiansky M., Heiman A., Kovler M., Rosin Y., et al. Appl. Phys. Lett. 89 (2006) 153506
6. Lee C.H., Hur S.H., Shin Y.C., and Choi J.H. Appl. Phys. Lett. 86 (2005) 152908
7. Quantum ESPRESSO,
8. Gutierrez G., Taga A., and Johansson B. Phys. Rev. B 65 (2001) 012101
9. French R.H. J. Amer. Ceram. Soc. 73 (1990) 477
10. Brytov I.A., and Romashchenko Y.N. Fiz. Tverd. Tela 20 (1978) 664
11. Brytov I.A., and Romashchenko Y.N. Sov. Phys. Sol. State 20 (1978) 384
12. Grisenko V.A., Novikov Yu.N., Shaposhnikov A.V., et al. Semiconductors 35 (2001) 997