Structural and optical properties of germanium nanostructures on si(100) and embedded in high-k oxides

Nanoscale Research Letters

Volumn 6, Issue 1, 2011, Pages

  Ray, Samit K ^a   Das, Samaresh ^a   Singha, Raj K ^a   Manna, Santanu ^a   Dhar, Achintya ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; INFRARED DETECTORS; MAGNETRON SPUTTERING; NANOCRYSTALS; OPTICAL PROPERTIES; PHOTODETECTORS; PHOTONS; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS; TEMPERATURE; FLASH MEMORY; GERMANIUM; SILICON;

BIAS-DEPENDENT PHOTOCURRENTS; FLOATING GATE MEMORY DEVICES; GERMANIUM NANOSTRUCTURES; INFRARED PHOTOLUMINESCENCE; MID-INFRARED PHOTODETECTORS; RADIO FREQUENCY MAGNETRON SPUTTERING; STRUCTURAL AND OPTICAL PROPERTIES; TRANSMISSION ELECTRON MICROGRAPH; CONDUCTION CHANNEL; DIFFERENT SIZES; DIRECT TUNNELING; EMBEDDED NANOCRYSTALS; GE ISLAND; GE NANOCRYSTALS; GE QUANTUM DOT; HIGH-K OXIDES; INFRARED PHOTODETECTOR; LOW TEMPERATURES; OXIDE MATRIX; PHOTOCURRENT SPECTRUM; SI(0 0 1); SI(1 0 0); TRAPPING SITES;

GERMANIUM COMPOUNDS; OPTICAL PROPERTIES;

EID: 82655177888     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-6-224     Document Type: Article

References (24)

1. Park CJ, Cho KH, Yang W-C, Cho HY, Choi S-H, Elliman RG, Han JH, Kim C: Large capacitance-voltage hysteresis loops in SiO2 films containing Ge nanocrystals produced by ion implantation and annealing. Appl Phys Lett 2006,88:071916.
2. Das S, Das K, Singha RK, Dhar A, Ray SK: Improved charge injection characteristics of Ge nanocrystals embedded in hafnium oxide for floating gate devices. Appl Phys Lett 2007, 91:233118.
3. Das K, NandaGoswami M, Mahapatra R, Kar GS, Dhar A, Acharya HN, Maikap S, Lee J-H, Ray SK: Charge storage and photoluminescence characteristics of silicon oxide embedded Ge nanocrystal trilayer structures. Appl Phys Lett 2004, 84:1386.
4. Zhang J-Y, Ye Y-H, Tan X-L, Bao X-M: Voltage-controlledelectroluminescence from SiO2 films containing Ge nanocrystals and its mechanism. Appl Phys A 2000, 71:299.
5. Liao MH, Yu C-Y, Lin T-H, Liu CW: Electroluminescence from the Ge quantum dot MOS tunneling diodes. IEEE Electron Device Lett 2006, 27:252.
6. Takeoka S, Fujii M, Hayashi S, Yamamoto K: Size-dependent near-infrared photoluminescence from Ge nanocrystals embedded in SiO2 matrices. Phys Rev B 1998, 58:7921.
7. Thewalt MLW, Harrison DA, Reinhart CF, Wolk JA: Type II Band Alignment in Si1-xGex/Si(001) Quantum Wells: The Ubiquitous Type I Luminescence Results from Band Bending. Phys Rev Lett 1997, 79:269.
8. Schmidt OG, Eberl K, Rau Y: Strain and band-edge alignment in single and multiple layers of self-assembled Ge/Si and GeSi/Si islands. Phys Rev B 2000, 62:16715.
9. Kamenev BV, Tsybeskov L, Baribeau J-M, Lockwood DJ: Coexistence of fast and slow luminescence in three-dimensional Si/Si1-xGex nanostructures. Phys Rev B 2005, 72:193306-1.
10. Walters RJ, Bourianoff GI, Atwater HA: Field-effect electroluminescence in silicon nanocrystals. Nat Mater 2005, 4:143.
11. Ross FM, Tromp RM, Reuter MC: Transition States Between Pyramids and Domes During Ge/Si Island Growth. Science 1999, 286:1931.
12. Montalenti F, Raiteri P, Migas DB, Von Kanel H, Rastelli A, Manzano C, Costantini G, Denker U, Schmidt OG, Ken K, Miglio L: Atomic-Scale Pathway of the Pyramid-to-Dome Transition during Ge Growth on Si (001). Phys Rev Lett 2004, 93:216102-1.
13. Singha RK, Das S, Majumder S, Das K, Dhar A, Ray SK: Evolution of strain and composition of Ge islands on Si (001) grown by molecular beam epitaxy during postgrowth annealing. J Appl Phys 2008, 103:114301.
14. Shaleev MV, Novikov AV, Yablonskiy AN, Drozdov YN, Lobanov DN, Krasilnik ZF, Kuznetsov OA: Photoluminescence of Ge(Si) self-assembled islands embedded in a tensile-strained Si layer. Appl Phys Lett 2006, 88:011914.
15. Weast RC, Lide DR, Astle MJ, Beyer WH: CRC Handbook of Chemistry and Physics: a ready-Reference Book of Chemical and Physical Data. Boca Raton: CRC;, 70 1990.
16. Wu XL, Gao T, Bao XM, Yan F, Jiang SS, Feng D: Annealing temperature dependence of Raman scattering in Ge+-implanted SiO2 films. J Appl Phys 1997, 82:2704.
17. Wellner A, Paillard V, Bonafos C, Coffin H, Claverie A, Schmidt B, Heinig KH: Stress measurements of germanium nanocrystals embedded in silicon oxide. J Appl Phys 2003, 94:5639.
18. Sharp ID, Xu Q, Yi DO, Yuan CW, Beeman JW, Yu KM, Ager JW, Chrzan DC, Haller EE: Structural properties of Ge nanocrystals embedded in sapphire. J Appl Phys 2006, 100:114317.
19. Das S, Singha RK, Manna S, Gangopadhyay S, Dhar A, Ray SK: Microstructural, chemical bonding, stress development and charge storage characteristics of Ge nanocrystals embedded in hafnium oxide. J Nanopart Res 2010, 13:587-595.
20. Choi WK, Chew HG, Zheng F, Chim WK, Foo YL, Fitzgerald EA: Stress development of germanium nanocrystals in silicon oxide matrix. Appl Phys Lett 2006, 89:113126.
21. Cerdeira F, Buchenauer CJ, Pollack Fred H, Cardona M: Stress-Induced Shifts of First-Order Raman Frequencies of Diamond- and Zinc-Blende- Type Semiconductors. Phys Rev B 1972, 5:580.
22. Richter H, Wang ZP, Ley B: The one phonon Raman spectrum in microcrystalline silicon. Solid State Commun 1981, 39:625.
23. Tiwari S, Rana F, Hanafi H, Hartstein A, Crabbe EF, Chan K: A silicon nanocrystals based memory. Appl Phys Lett 1996, 68:1377.
24. Nicollian EH, Brews JR: MOS Physics and Technology. New York: Wiley; 1982. doi:10.1186/1556-276X-6-224