Electroluminescence from the Ge quantum dot MOS tunneling diodes

IEEE Electron Device Letters

Volumn 27, Issue 4, 2006, Pages 252-254

  Liao, M H ^a   Yu, C Y ^a   Guo, T H ^a   Lin, C H ^a   Liu, C W ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

Ge quantum dot (QD) light emitting diodes (LEDs); MOS tunneling diode

Indexed keywords

DEPOSITION; ELECTROLUMINESCENCE; ELECTRON TUNNELING; ELECTRONS; LIGHT EMITTING DIODES; OXIDES; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; ULTRATHIN FILMS;

LIQUID PHASE DEPOSITION; MOS TUNNELING DIODE; OXIDE FILM; THERMAL BUDGET;

MOS DEVICES;

EID: 33645647504     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.870416     Document Type: Article

References (13)

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