Photoluminescence of Ge(Si) self-assembled islands embedded in a tensile-strained Si layer

Applied Physics Letters

Volumn 88, Issue 1, 2006, Pages

  Shaleev, M V ^a   Novikov, A V ^a   Yablonskiy, A N ^a   Drozdov, Y N ^a   Lobanov, D N ^a   Krasilnik, Z F ^a   Kuznetsov, O A ^b  

^a INSTITUTE FOR PHYSICS OF MICROSTRUCTURES   (Russian Federation)

^b LOBACHEVSKY STATE UNIVERSITY OF NIZHNY NOVGOROD   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTIONS; PHOTOLUMINESCENCE; POLISHING; SELF ASSEMBLY; SILICON; TENSILE STRESS;

BUFFER LAYERS; MECHANICAL POLISHING; OPTICAL TRANSITION; SELF-ASSEMBLED ISLANDS;

SEMICONDUCTING GERMANIUM;

EID: 33645514144     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2158506     Document Type: Article

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