Structural properties of Ge nanocrystals embedded in sapphire

Journal of Applied Physics

Volumn 100, Issue 11, 2006, Pages

  Sharp, I D ^d   Xu, Q ^d   Yi, D O ^a   Yuan, C W ^b,c   Beeman, J W ^b   Yu, K M ^b   Ager III, J W ^b   Chrzan, D C ^c   Haller, E E ^b  

^a LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c Lawrence Berkeley National Laboratory   (United States)

^d NONE

Author keywords

[No Author keywords available]

Indexed keywords

MELTING POINT; SELF-DIFFUSION RATE; STRUCTURAL PROPERTIES;

COMPRESSIVE STRESS; GERMANIUM COMPOUNDS; RAMAN SCATTERING; SAPPHIRE; SILICA; TRANSMISSION ELECTRON MICROSCOPY;

NANOSTRUCTURED MATERIALS;

EID: 33845787562     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2398727     Document Type: Article

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