SCOPUS 정보 검색 플랫폼

Electrochemical and Solid-State Letters

Volumn 13, Issue 11, 2010, Pages

Effect of arsenic implantation dose on p-type ZnO films obtained via thermal diffusion from silicon substrates

(5) Huang, Yi Jen a Shih, Meng Fu a Liu, Chun Chu b Chu, Sheng Yuan a Lo, Kuang Yao b

a NATIONAL CHENG KUNG UNIVERSITY (Taiwan)

b NATIONAL CHIAYI UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AIR AMBIENT; ARSENIC IMPLANTATION; AS-IMPLANTATION; DOPED ZNO; HIGH DOSE; IMPLANTATION CONDITIONS; IMPLANTATION DOSE; LOW ENERGIES; P-TYPE CONDUCTION; P-TYPE ZNO FILM; SILICON SUBSTRATES; SURFACE REGION; THERMAL TREATMENT; ZNO FILMS;

ARSENIC; DOPING (ADDITIVES); HOLE CONCENTRATION; SUBSTRATES; THERMAL DIFFUSION IN LIQUIDS; ZINC OXIDE;

METALLIC FILMS;

EID: 77956599268 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.3479688 Document Type: Article

Times cited : (2)

References (24)

1
- 24144443526
- Electron transport in ZnO thin films
- DOI 10.1063/1.1991994, 022101
- T. Makino, Y. Segawa, A. Tsukazaki, A. Ohtomo, and M. Kawasaki, Appl. Phys. Lett. APPLAB 0003-6951, 87, 022101 (2005). 10.1063/1.1991994 (Pubitemid 41227667)
- (2005) Applied Physics Letters , vol.87 , Issue.2 , pp. 1-3
- Makino, T.¹ Segawa, Y.² Tsukazaki, A.³ Ohtomo, A.⁴ Kawasaki, M.⁵

2
- 30944461193
- 3 structures
- DOI 10.1016/j.tsf.2005.07.065, PII S0040609005009259, Proceedings of the Third Asian Conference on Chemical Vapor Deposition (Third Asian-CVD), Third Asian CVD
- R. C. Chang, S. Y. Chu, and Y. T. Chung, Thin Solid Films THSFAP 0040-6090, 498, 146 (2006). 10.1016/j.tsf.2005.07.065 (Pubitemid 43113140)
- (2006) Thin Solid Films , vol.498 , Issue.1-2 , pp. 146-151
- Chang, R.-C.¹ Chu, S.-Y.² Hong, C.-S.³ Chuang, Y.-T.⁴

3
- 27144469303
- Properties of ZnO thin films grown on Si substrates by MOCVD and ZnO/Si heterojunctions
- DOI 10.1088/0268-1242/20/11/006, PII S0268124205015087
- Y. Zhang, G. Du, B. Zhang, Y. Cui, H. Zhu, and Y. Chang, Semicond. Sci. Technol. SSTEET 0268-1242, 20, 1132 (2005). 10.1088/0268-1242/20/11/006 (Pubitemid 41509083)
- (2005) Semiconductor Science and Technology , vol.20 , Issue.11 , pp. 1132-1135
- Zhang, Y.¹ Du, G.² Zhang, B.³ Cui, Y.⁴ Zhu, H.⁵ Chang, Y.⁶

4
- 0000272288
- JAPIAU 0021-8979,. 10.1063/1.350815
- J. H. Jou and M. Y. Han, J. Appl. Phys. JAPIAU 0021-8979, 71, 4333 (1992). 10.1063/1.350815
- (1992) J. Appl. Phys. , vol.71 , pp. 4333
- Jou, J.H.¹ Han, M.Y.²

5
- 0010059052
- PLRBAQ 0556-2805,. 10.1103/PhysRevB.63.075205
- S. B. Zhang, S. H. Wei, and A. Zunger, Phys. Rev. B PLRBAQ 0556-2805, 63, 075205 (2001). 10.1103/PhysRevB.63.075205
- (2001) Phys. Rev. B , vol.63 , pp. 075205
- Zhang, S.B.¹ Wei, S.H.² Zunger, A.³

6
- 77956601143
- PHYBE3 0921-4526.
- S. B. Zhang, S. H. Wei, and Y. Yan, Physica B PHYBE3 0921-4526, 135, 302 (2001).
- (2001) Physica B , vol.135 , pp. 302
- Zhang, S.B.¹ Wei, S.H.² Yan, Y.³

7
- 77949682039
- JESOAN 0013-4651,. 10.1149/1.3298726
- Y. J. Huang, C. W. Liu, S. Y. Chu, and K. Y. Lo, J. Electrochem. Soc. JESOAN 0013-4651, 157, H435 (2010). 10.1149/1.3298726
- (2010) J. Electrochem. Soc. , vol.157 , pp. 435
- Huang, Y.J.¹ Liu, C.W.² Chu, S.Y.³ Lo, K.Y.⁴

8
- 18744365851
- Preparation of As-doped p -type ZnO films using a Zn3 As2 ZnO target with pulsed laser deposition
- DOI 10.1063/1.1854748, 062101
- V. Vaithianathan, B. T. Lee, and S. S. Kim, Appl. Phys. Lett. APPLAB 0003-6951, 86, 062101 (2005). 10.1063/1.1854748 (Pubitemid 40665520)
- (2005) Applied Physics Letters , vol.86 , Issue.6 , pp. 1-3
- Vaithianathan, V.¹ Lee, B.-T.² Kim, S.S.³

9
- 0042842374
- APPLAB 0003-6951,. 10.1063/1.1590423
- Y. R. Ryu, T. S. Lee, and H. W. White, Appl. Phys. Lett. APPLAB 0003-6951, 83, 87 (2003). 10.1063/1.1590423
- (2003) Appl. Phys. Lett. , vol.83 , pp. 87
- Ryu, Y.R.¹ Lee, T.S.² White, H.W.³

10
- 3142749135
- JAPIAU 0021-8979,. 10.1063/1.1756220
- T. S. Jeong, M. S. Han, C. J. Youn, and Y. S. Park, J. Appl. Phys. JAPIAU 0021-8979, 96, 175 (2004). 10.1063/1.1756220
- (2004) J. Appl. Phys. , vol.96 , pp. 175
- Jeong, T.S.¹ Han, M.S.² Youn, C.J.³ Park, Y.S.⁴

11
- 70350118030
- JAPIAU 0021-8979,. 10.1063/1.3236578
- J. C. Fan, C. Y. Zhu, S. Fung, Y. C. Zhong, K. S. Wong, Z. Xie, G. Brauer, W. Anwand, W. Skorupa, C. K. To, J. Appl. Phys. JAPIAU 0021-8979, 106, 073709 (2009). 10.1063/1.3236578
- (2009) J. Appl. Phys. , vol.106 , pp. 073709
- Fan, J.C.¹ Zhu, C.Y.² Fung, S.³ Zhong, Y.C.⁴ Wong, K.S.⁵ Xie, Z.⁶ Brauer, G.⁷ Anwand, W.⁸ Skorupa, W.⁹ To, C.K.¹⁰

12
- 2542438239
- PRLTAO 0031-9007,. 10.1103/PhysRevLett.92.155504
- S. Limpijumnong, S. B. Zhang, S. H. Wei, and C. H. Park, Phys. Rev. Lett. PRLTAO 0031-9007, 92, 155504 (2004). 10.1103/PhysRevLett.92.155504
- (2004) Phys. Rev. Lett. , vol.92 , pp. 155504
- Limpijumnong, S.¹ Zhang, S.B.² Wei, S.H.³ Park, C.H.⁴

13
- 33750700009
- Investigation on the p -type formation mechanism of arsenic doped p -type ZnO thin film
- DOI 10.1063/1.2364865
- H. S. Kang, G. H. Kim, D. L. Kim, H. W. Chang, B. D. Ahn, and S. Y. Lee, Appl. Phys. Lett. APPLAB 0003-6951, 89, 181103 (2006). 10.1063/1.2364865 (Pubitemid 44705647)
- (2006) Applied Physics Letters , vol.89 , Issue.18 , pp. 181103
- Kang, H.S.¹ Kim, G.H.² Kim, D.L.³ Chang, H.W.⁴ Ahn, B.D.⁵ Lee, S.Y.⁶

14
- 0033717519
- JCRGAE 0022-0248,. 10.1016/S0022-0248(00)00437-1
- Y. R. Ryu, S. Zhu, D. C. Look, J. M. Wrobel, H. M. Jeong, and H. W. White, J. Cryst. Growth JCRGAE 0022-0248, 216, 330 (2000). 10.1016/S0022- 0248(00)00437-1
- (2000) J. Cryst. Growth , vol.216 , pp. 330
- Ryu, Y.R.¹ Zhu, S.² Look, D.C.³ Wrobel, J.M.⁴ Jeong, H.M.⁵ White, H.W.⁶

15
- 0034325665
- JCRGAE 0022-0248,. 10.1016/S0022-0248(00)00731-4
- Y. R. Ryu, W. J. Kim, and H. W. White, J. Cryst. Growth JCRGAE 0022-0248, 219, 419 (2000). 10.1016/S0022-0248(00)00731-4
- (2000) J. Cryst. Growth , vol.219 , pp. 419
- Ryu, Y.R.¹ Kim, W.J.² White, H.W.³

16
- 0037850693
- JCRGAE 0022-0248,. 10.1016/S0022-0248(03)01205-3
- D. K. Hwang, K. H. Bang, M. C. Jeong, and J. M. Myoung, J. Cryst. Growth JCRGAE 0022-0248, 254, 449 (2003). 10.1016/S0022-0248(03)01205-3
- (2003) J. Cryst. Growth , vol.254 , pp. 449
- Hwang, D.K.¹ Bang, K.H.² Jeong, M.C.³ Myoung, J.M.⁴

17
- 0345171414
- ASUSEE 0169-4332,. 10.1016/S0169-4332(03)00947-4
- W. Lee, D. K. Hwang, M. C. Jeong, M. Lee, M. S. Oh, W. K. Choi, and J. M. Myoung, Appl. Surf. Sci. ASUSEE 0169-4332, 221, 32 (2004). 10.1016/S0169- 4332(03)00947-4
- (2004) Appl. Surf. Sci. , vol.221 , pp. 32
- Lee, W.¹ Hwang, D.K.² Jeong, M.C.³ Lee, M.⁴ Oh, M.S.⁵ Choi, W.K.⁶ Myoung, J.M.⁷

18
- 10644272652
- ASUSEE 0169-4332,. 10.1016/j.apsusc.2004.06.149
- T. H. Moon, M. C. Jeong, W. Lee, and J. M. Myoung, Appl. Surf. Sci. ASUSEE 0169-4332, 240, 280 (2005). 10.1016/j.apsusc.2004.06.149
- (2005) Appl. Surf. Sci. , vol.240 , pp. 280
- Moon, T.H.¹ Jeong, M.C.² Lee, W.³ Myoung, J.M.⁴

19
- 0004068386
- in, F. Y. Y. Yang, Editor, North Holland, Amsterdam.
- R. B. Fair, in Impurity Dopant Process in Silicon, F. Y. Y. Yang, Editor, North Holland, Amsterdam (1981).
- (1981) Impurity Dopant Process in Silicon
- Fair, R.B.¹

20
- 84990713843
- PSSABA 0031-8965,. 10.1002/pssa.2211010113
- V. E. Boeisenko and S. G. Yudin, Phys. Status Solidi A PSSABA 0031-8965, 101, 123 (1987). 10.1002/pssa.2211010113
- (1987) Phys. Status Solidi A , vol.101 , pp. 123
- Boeisenko, V.E.¹ Yudin, S.G.²

21
- 63749112761
- JPAPBE 0022-3727,. 10.1088/0022-3727/42/1/015407
- B. Yao, Y. P. Xie, C. X. Cong, H. J. Zhao, Y. R. Sui, T. Yang, and Q. He, J. Phys. D JPAPBE 0022-3727, 42, 015407 (2009). 10.1088/0022-3727/42/1/015407
- (2009) J. Phys. D , vol.42 , pp. 015407
- Yao, B.¹ Xie, Y.P.² Cong, C.X.³ Zhao, H.J.⁴ Sui, Y.R.⁵ Yang, T.⁶ He, Q.⁷

22
- 0019021929
- SHALLOW JUNCTIONS BY HIGH-DOSE AS IMPLANTS IN Si: EXPERIMENTS AND MODELING
- DOI 10.1063/1.328078
- M. Y. Tsai, F. F. Morehead, J. E. E. Baglin, and A. E. Michel, J. Appl. Phys. JAPIAU 0021-8979, 51, 3230 (1980). 10.1063/1.328078 (Pubitemid 11441229)
- (1980) Journal of Applied Physics , vol.51 , Issue.6 , pp. 3230-3235
- Tsai, M.Y.¹ Moorehead, F.F.² Baglin, J.E.E.³ Michel, A.E.⁴

23
- 0000516822
- PLRBAQ 0556-2805,. 10.1103/PhysRevB.49.11159
- G. Hollinger, R. Skheyta-Kabbani, and M. Gendry, Phys. Rev. B PLRBAQ 0556-2805, 49, 11159 (1994). 10.1103/PhysRevB.49.11159
- (1994) Phys. Rev. B , vol.49 , pp. 11159
- Hollinger, G.¹ Skheyta-Kabbani, R.² Gendry, M.³

24
- 36249000644
- Quantitative analysis of surface donors in ZnO
- DOI 10.1016/j.susc.2007.09.030, PII S0039602807009557
- D. C. Look, Surf. Sci. SUSCAS 0039-6028, 601, 5315 (2007). 10.1016/j.susc.2007.09.030 (Pubitemid 350122665)
- (2007) Surface Science , vol.601 , Issue.23 , pp. 5315-5319
- Look, D.C.¹

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.