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Volumn 110, Issue 10, 2011, Pages

High carrier concentration induced effects on the bowing parameter and the temperature dependence of the band gap of GaxIn1-xN

Author keywords

[No Author keywords available]

Indexed keywords

BOWING PARAMETERS; FREE CARRIER DENSITY; FREE ELECTRON; HIGH-ELECTRON-DENSITY; LINE SHAPE; MANY-BODY EFFECT; PEAK ENERGY; PL SPECTRA; TEMPERATURE DEPENDENCE;

EID: 82555177250     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3660692     Document Type: Conference Paper
Times cited : (8)

References (27)
  • 1
    • 20644452446 scopus 로고    scopus 로고
    • InN, latest development and a review of the band-gap controversy
    • DOI 10.1016/j.spmi.2005.03.004, PII S0749603605000376
    • K. S. A. Butcher and T. L. Tansley, Superlattices Microstruct. 38, 1 (2005). 10.1016/j.spmi.2005.03.004 (Pubitemid 40834102)
    • (2005) Superlattices and Microstructures , vol.38 , Issue.1 , pp. 1-37
    • Butcher, K.S.A.1    Tansley, T.L.2
  • 9
    • 20644460134 scopus 로고    scopus 로고
    • Optical properties of InN - The bandgap question
    • DOI 10.1016/j.spmi.2005.04.006, PII S0749603605000558
    • B. Monemar, P. P. Paskov, and A. Kasic, Superlattices Microstruct. 38, 38-56 (2005). 10.1016/j.spmi.2005.04.006 (Pubitemid 40834103)
    • (2005) Superlattices and Microstructures , vol.38 , Issue.1 , pp. 38-56
    • Monemar, B.1    Paskov, P.P.2    Kasic, A.3
  • 21
    • 32844475082 scopus 로고    scopus 로고
    • Photoluminescent properties of InN epifilms
    • DOI 10.1088/0268-1242/21/3/005, PII S0268124206045883
    • S. P. Fu, T. T. Chen, and Y. F. Chen, Semicond. Sci. Technol. 21, 244 (2006). 10.1088/0268-1242/21/3/005 (Pubitemid 43254092)
    • (2006) Semiconductor Science and Technology , vol.21 , Issue.3 , pp. 244-249
    • Fu, S.P.1    Chen, T.T.2    Chen, Y.F.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.