A comparative study of electrical and optical properties of InN and In0.48Ga0.52N

Microelectronics Journal

Volumn 40, Issue 4-5, 2009, Pages 872-874

  Gunes, M ^a   Balkan, N ^a   Zanato, D ^a   Schaff, W J ^b  

^a UNIVERSITY OF ESSEX   (United Kingdom)

^b School of Operations Research and Industrial Engineering   (United States)

Author keywords

High field transport in InN; In rich GaInN; InN

Indexed keywords

ELECTRIC COILS; ELECTRIC FIELD EFFECTS; ELECTRIC FIELD MEASUREMENT; GALLIUM; INDIUM; NEGATIVE RESISTANCE; OPTICAL PROPERTIES;

APPLIED ELECTRIC FIELDS; COMPARATIVE STUDIES; DRIFT VELOCITIES; ELECTRICAL AND OPTICAL PROPERTIES; HALL MEASUREMENTS; HIGH ELECTRIC FIELDS; HIGH FIELD TRANSPORT IN INN; I - V CURVES; IN RICH GAINN; INDIUM CONCENTRATIONS; INDIUM SEGREGATIONS; INN; LOW CONCENTRATIONS; NEGATIVE DIFFERENTIAL RESISTANCES; PHOTOLUMINESCENCE SPECTRUM; SINGLE PEAKS;

ELECTRIC NETWORK ANALYSIS;

EID: 63749111816     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2008.11.020     Document Type: Article

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