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Volumn 110, Issue 10, 2011, Pages

Temperature-dependent leakage current behavior of epitaxial Bi 0.5Na0.5TiO3-based thin films made by pulsed laser deposition

(2) Hejazi, M M a Safari, A a

a Piscataway (United States)

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED FIELD; CURRENT BEHAVIORS; DIFFERENT SLOPES; DOMINANT MECHANISM; ELECTRICAL CONDUCTION MECHANISMS; HIGH ELECTRIC FIELDS; INJECTED CARRIERS; LEAKAGE MECHANISM; OHMIC CONDUCTION; PULSED-LASER DEPOSITION TECHNIQUE; RELATIVE LOCATION; SHALLOW TRAPS; SPACE CHARGE LIMITED CURRENTS; TEMPERATURE DEPENDENT; TEMPERATURE RANGE; TIO;

ACTIVATION ENERGY; BARIUM COMPOUNDS; DEPOSITION; ELECTRIC FIELDS; LEAKAGE CURRENTS; PULSED LASER DEPOSITION; SODIUM; THIN FILMS; VAPOR DEPOSITION;

PULSED LASERS;

EID: 82555163315 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3660428 Document Type: Conference Paper

Times cited : (24)

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