Quantifying electronic charge trap states and the effect of imprint on ferroelectric poly(vinylidene fluoride-trifluoroethylene) thin films

Journal of Applied Physics

Volumn 107, Issue 10, 2010, Pages

  Lew, Connie ^a   Thompson, Michael O ^a  

^a Cornell University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE ACCUMULATION; CHARGE TRAP; CHARGE TRAP STATE; DIRECT LINKS; ELECTRONIC CHARGES; FERROELECTRIC PROPERTY; FINAL STATE; IMPRINT TIME; ISOTHERMAL CONDITIONS; KEY MATERIALS; LOGARITHMIC DEPENDENCE; MATERIALS INTERACTION; MEMORY APPLICATIONS; POLARIZATION DYNAMICS; POLY(VINYLIDENE FLUORIDE-TRIFLUOROETHYLENE); POLY(VINYLIDENE FLUORIDE-TRIFLUOROETHYLENE) [P(VDF-TRFE)]; PROMISING MATERIALS; RAMP RATES; RESISTANCE TO POLARIZATIONS; ROOM TEMPERATURE; SI SUBSTRATES; SWITCHING SPEED; TEMPERATURE CYCLING; THERMALLY STIMULATED CURRENT; TIME-DEPENDENT; TRAPPED CHARGE;

CHARGE TRAPPING; FERROELECTRICITY; POLARIZATION; THIN FILMS;

FERROELECTRIC FILMS;

EID: 77952969706     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3427559     Document Type: Article

References (37)

1. H. Kawai, Jpn. J. Appl. Phys., Part 1 JAPNDE 0021-4922 8, 975 (1969). 10.1143/JJAP.8.975
2. J. F. Scott and C. A. Paz de Araujo, Science SCIEAS 0036-8075 246, 1400 (1989). 10.1126/science.246.4936.1400
3. Y. Xu, Ferroelectric Materials and Their Applications (North-Holland, Amsterdam, The Netherlands, 1991).
4. O. Auciello, J. F. Scott, and R. Ramesh, Phys. Today PHTOAD 0031-9228 51 (7), 22 (1998). 10.1063/1.882324
5. N. Setter, D. Damjanovic, L. Eng, G. Fox, S. Gevorgian, S. Hong, A. Kingon, H. Kohlstedt, N. Y. Park, G. B. Stephenson, I. Stolitchnov, A. K. Taganstev, D. V. Taylor, T. Yamada, and S. Streiffer, J. Appl. Phys. JAPIAU 0021-8979 100, 051606 (2006). 10.1063/1.2336999 (Pubitemid 44424530)
6. A. J. Lovinger, Science SCIEAS 0036-8075 220, 1115 (1983). 10.1126/science.220.4602.1115
7. T. Furukawa, Phase Transititions PHTRDP 0141-1594 18 (3&4), 143 (1989). 10.1080/01411598908206863 0141-1594
8. G. I. Leistad and H. G. Gudesen, Patent No. WO2003081602 A1 (2 October 2003).
9. H. G. Gudesen, P. E. Nordal, and G. I. Leistad, U.S. Patent No. 6,498,744 (24 December 2002).
10. H. G. Gudesen, P. E. Nordal, G. I. Leistad, M. Berggren, G. Gustafsson, and J. Karlsson, U.S. Patent No. 6,541,869 (1 April 2003).
11. P. E. Nordal, H. G. Gudesen, G. I. Leistad, and G. Gustafsson, Patent No. WO2001069679 A1 (20 September 2001).
12. M. Grossmann, O. Lohse, D. Bolten, U. Boettger, T. Schneller, and R. Waser, J. Appl. Phys. JAPIAU 0021-8979 92, 2680 (2002). 10.1063/1.1498966 (Pubitemid 35037879)
13. S. H. Kim, D. S. Lee, C. S. Hwang, D. J. Kim, and A. I. Kingon, Appl. Phys. Lett. APPLAB 0003-6951 77, 3036 (2000). 10.1063/1.1324001
14. W. L. Warren, B. A. Tuttle, D. Dimos, G. E. Pike, H. N. Al-Shareef, R. Ramesh, and J. T. Evans, Jr., Jpn. J. Appl. Phys., Part 1 JAPNDE 0021-4922 35, 1521 (1996). 10.1143/JJAP.35.1521
15. M. Grossmann, O. Lohse, D. Bolten, U. Boettger, and R. Waser, J. Appl. Phys. JAPIAU 0021-8979 92, 2688 (2002). 10.1063/1.1498967 (Pubitemid 35037880)
16. P. Schorn, U. Ellerkmann, D. Bolten, U. Boettger, and R. Waser, Integr. Ferroelectr. IFEREU 1058-4587 53, 361 (2003). 10.1080/10584580390258282 (Pubitemid 44798401)
17. A. K. Tagantsev, I. Stolichnov, N. Setter, and J. S. Cross, J. Appl. Phys. JAPIAU 0021-8979 96, 6616 (2004). 10.1063/1.1805190 (Pubitemid 44938252)
18. I. Lazareva, Y. Koval, P. Muller, K. Muller, K. Henkel, and D. Schmeisser, J. Appl. Phys. JAPIAU 0021-8979 105, 054110 (2009). 10.1063/1.3088887
19. I. Engquist, M. Johansson, C. Karlsson, and G. Gustafsson, private communication (2002).
20. S. Ikeda, T. Fukada, and Y. Wada, J. Appl. Phys. JAPIAU 0021-8979 64, 2026 (1988). 10.1063/1.341733
21. I. L. Guy and D. K. Das-Gupta, Polym. Int. PLYIEI 0959-8103 27, 225 (1992). 10.1002/pi.4990270305
22. M. Womes, E. Bihler, and W. Eisenmenger, IEEE Trans. Electr. Insul. IETIAX 0018-9367 24, 461 (1989). 10.1109/14.30890 (Pubitemid 20606142)
23. Y. Arayashiki, T. Nakajima, Y. Takahashi, and T. Furukawa, Polym. Prepr. Jpn. 55, 3847 (2006).
24. Y. Arayashiki, T. Nakajima, Y. Takahashi, and T. Furukawa, Proceedings of the 12th IEEE International Symposium on Electrets (IEEE, Piscataway, NJ, 2005), pp. 159-160.
25. A. J. Lovinger, in Developments in Crystalline Polymers, edited by, D. C. Basset, (Elsevier Science, London, England, 1982), Vol. 1, p. 195.
26. C. Lew, Ph.D. thesis, Cornell University, 2006.
27. C. Lew and M. O. Thompson, J. Appl. Phys. JAPIAU 0021-8979 105, 054112 (2009). 10.1063/1.3081639
28. C. Lew and M. O. Thompson, Rev. Sci. Instrum. RSINAK 0034-6748 79, 043906 (2008). 10.1063/1.2917183 (Pubitemid 351620156)
29. A. Thielen, E. Hendrick, J. Niezette, J. Vanderschueren, and G. Feyder, J. Appl. Phys. JAPIAU 0021-8979 75, 4069 (1994). 10.1063/1.356031
30. J. M. Guimarães Neto, O. N. Oliveira, Jr., and R. M. Faria, Appl. Phys. A: Mater. Sci. Process. APAMFC 0947-8396 71, 267 (2000). 10.1007/s003390000501
31. A. Baba and K. Ikezaki, J. Appl. Phys. JAPIAU 0021-8979 57, 359 (1985). 10.1063/1.334815
32. T. Mitsui and E. Nakamura, in Crystal and Solid State Physics, Ferroelectrics and Related Substances, Landolt-Börnstein, New Series, Group III, Vol. 28B, edited by, O. Madelung, (Springer-Verlag, Berlin, 1990), p. 694.
33. T. Kikuchi, J. Phys. Soc. Jpn. JUPSAU 0031-9015 13, 526 (1958). 10.1143/JPSJ.13.526
34. E. R. Neagu, J. N. Marat-Mendes, D. K. Das-Gupta, R. M. Neagu, and R. Igreja, J. Appl. Phys. JAPIAU 0021-8979 82, 2488 (1997). 10.1063/1.366061
35. J. Steiger, R. Schmechel, and H. von Seggern, Synth. Met. SYMEDZ 0379-6779 129, 1 (2002). 10.1016/S0379-6779(02)00012-7 (Pubitemid 34704299)
36. H. H. Wieder, J. Appl. Phys. JAPIAU 0021-8979 31, 180 (1960). 10.1063/1.1735396
37. H. von Seggern and G. F. L. Ferreira, Appl. Phys. Lett. APPLAB 0003-6951 83, 3353 (2003). 10.1063/1.1616973