Titanium diffusion into (K0.5Na0.5)NbO3 thin films deposited on Pt/Ti/SiO2/Si substrates and corresponding effects

Journal of the American Ceramic Society

Volumn 92, Issue 6, 2009, Pages 1322-1327

  Goh, Phoi Chin ^a   Yao, Kui ^a   Chen, Zhong ^b  

^a INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; DEPTH PROFILE; ELECTRICAL PROPERTY; LEAD-FREE; RAMPING RATE; SECONDARY ION MASS SPECTROSCOPY; SI SUBSTRATES; SOL-GEL PROCESSING; THERMAL TREATMENT; TI DIFFUSION; VALENCE STATE;

DIFFUSION; ELECTRIC PROPERTIES; FERROELECTRIC FILMS; GELATION; GRAIN BOUNDARIES; HEAT TREATMENT; NIOBIUM; SECONDARY ION MASS SPECTROMETRY; SILICON; SOL-GEL PROCESS; SURFACE DIFFUSION; THIN FILMS; TITANIUM; X RAY PHOTOELECTRON SPECTROSCOPY;

SUBSTRATES;

EID: 66949114357     PISSN: 00027820     EISSN: 15512916     Source Type: Journal    
DOI: 10.1111/j.1551-2916.2009.03058.x     Document Type: Article

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