The passivation mechanism of nitrogen ions on the gate leakage current of HfO2/AlGaN/GaN MOS-HEMTs

Science China: Physics, Mechanics and Astronomy

Volumn 54, Issue 12, 2011, Pages 2170-2173

  Bi, Zhiwei ^a   Hao, Yue ^a   Feng, Qian ^a   Jiang, Tingting ^b   Cao, Yanrong ^a   Zhang, Jincheng ^a   Mao, Wei ^a   Lü, Ling ^a   Zhang, Yue ^a  

^a XIDIAN UNIVERSITY   (China)

^b FUDAN UNIVERSITY   (China)

Author keywords

AlGaN GaN; gate leakage current; MOS HEMT; nitrogen ions; passivation

Indexed keywords

ALGAN/GAN; FIRST-PRINCIPLES CALCULATION; GAP STATE; GATE-LEAKAGE CURRENT; METAL OXIDE SEMICONDUCTOR; MOS-HEMT; NITROGEN IONS; REVERSE GATE;

ATOMIC LAYER DEPOSITION; CALCULATIONS; GALLIUM NITRIDE; HAFNIUM OXIDES; HIGH ELECTRON MOBILITY TRANSISTORS; IONS; MOS DEVICES; NITROGEN; OXYGEN; OXYGEN VACANCIES; PASSIVATION;

LEAKAGE CURRENTS;

EID: 82355175162     PISSN: 16747348     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11433-011-4539-y     Document Type: Article

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