High temperature electron transport properties of AlGaN/GaN heterostructures with different Al-contents

Science in China, Series G: Physics, Mechanics and Astronomy

Volumn 52, Issue 12, 2009, Pages 1879-1884

  Zhang, Zhongfen ^a   Zhang, Jincheng ^a   Xu, Zhihao ^a   Duan, Huantao ^a   Hao, Yue ^a  

^a XIDIAN UNIVERSITY   (China)

Author keywords

AlGaN GaN heterostructure; Electron transport; High temperature

Indexed keywords

AL-CONTENT; ALGAN/GAN HETEROSTRUCTURES; ELECTRON OCCUPATION; ELECTRON SYSTEMS; ELECTRON TRANSPORT; HETEROSTRUCTURES; HIGH TEMPERATURE; ROOM TEMPERATURE; SUB-BANDS; TEMPERATURE DEPENDENCIES; TWO-DIMENSIONAL GAS;

CRYSTALS; ELECTRON MOBILITY; ELECTRON TRANSITIONS; ELECTRON TRANSPORT PROPERTIES; GALLIUM; GALLIUM NITRIDE; HETEROJUNCTIONS; TRANSPORT PROPERTIES; TWO DIMENSIONAL ELECTRON GAS;

ALUMINUM;

EID: 77649096703     PISSN: 16721799     EISSN: 18622844     Source Type: Journal    
DOI: 10.1007/s11433-009-0306-8     Document Type: Article

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