Current rectification in a single silicon nanowire p-n junction

Journal of Nanoscience and Nanotechnology

Volumn 8, Issue 5, 2008, Pages 2419-2421

  Rangineni, Yaswanth ^a   Cheng, Qi ^a   Goncher, Gary ^b   Solanki, Raj ^a,b   Langworthy, Kurt ^c  

^a Department of Electrical and Computer Engineering   (United States)

^b PORTLAND STATE UNIVERSITY   (United States)

^c UNIVERSITY OF OREGON   (United States)

Author keywords

Nanowire; p n junction; Rectifier; Silicon

Indexed keywords

(MO Y) DOPING; CURRENT RECTIFICATION; CURRENT-VOLTAGE (C-V) MEASUREMENTS; INDIVIDUAL (PSS 544-7); N-DOPED; P N JUNCTIONS; SILICON NANOWIRES (SINWS); SILICON-NANOWIRE;

ELECTRIC RECTIFIERS; ELECTRIC WIRE; ELECTRON BEAM LITHOGRAPHY; ELECTRON BEAMS; ELECTRONICS INDUSTRY; MICROELECTRONICS; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOWIRES; PARTICLE BEAMS; SEMICONDUCTOR JUNCTIONS;

CURRENT VOLTAGE CHARACTERISTICS;

DIODES; ELECTRIC CONDUCTORS; ELECTRIC MEASUREMENT; ELECTRON BEAMS; ELECTRONICS; LEAKAGE; LITHOGRAPHY; RECTIFIERS; SEMICONDUCTOR DEVICES; SILICON;

EID: 45849094815     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2008.186     Document Type: Article

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