Electrical characteristics of the backgated bottom-up silicon nanowire FETs

IEEE Transactions on Nanotechnology

Volumn 7, Issue 6, 2008, Pages 683-687

  Kim, Duksoo ^a   Jung, Youngchai ^a   Park, Miyoung ^b   Kim, Byungsung ^b   Hong, Suheon ^a   Choi, Minsu ^a   Kang, Myunggil ^a   Yu, Yunseop ^c   Whang, Dongmok ^b   Hwang, Sungwoo ^a  

^a Korea University   (South Korea)

^b Sungkyunkwan University   (South Korea)

^c Hankyong National University   (South Korea)

Author keywords

Back gate; Contact resistance; Mobility extraction; Silicon nanowire (SiNW) FET

Indexed keywords

ACTIVATION ENERGY; CONTACT RESISTANCE; DROPS; FIELD EFFECT TRANSISTORS; GERMANIUM; MESFET DEVICES; NANOWIRES; NONMETALS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON COMPOUNDS; VOLTAGE CONTROL;

ACTIVATION BEHAVIORS; BACK GATE; BOTTOM-UP; ELECTRICAL CHARACTERISTICS; FIELD EFFECTS; GE NANOWIRES; MOBILITY EXTRACTION; MOBILITY VALUES; SCHOTTKY DIODES; SILICON NANOWIRE (SINW) FET; TEMPERATURE RANGES; VOLTAGE DROPS;

ELECTRIC WIRE;

EID: 58149269278     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2008.2005636     Document Type: Article

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