Power MOSFETs paralleling operation for high power high density converters

Conference Record - IAS Annual Meeting (IEEE Industry Applications Society)

Volumn 5, Issue , 2006, Pages 2284-2289

  Wang, Hongfang ^a   Wang, Fred ^a  

^a Virginia Polytechnic Institute and State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONVERTERS; PARAMETER ESTIMATION; PROBLEM SOLVING; SEMICONDUCTOR JUNCTIONS; THERMAL EFFECTS;

CURRENT RATING; CURRENT SHARING; DENSITY CONVERTERS;

MOSFET DEVICES;

EID: 34948878171     PISSN: 01972618     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IAS.2006.256860     Document Type: Conference Paper

References (9)

1. Pietkiewicz, A., Tollik, D., "Snubber circuit and MOSFET paralleling considerations for high power boost-based power-factor correctors", in proc. International Telecommunications Energy Conference, INTELEC'95, Nov. 1995, pp.41 -45.
2. Nelms, R.M., Johnson, R.W., "200°C operation of a 500-W DC-DC converter utilizing power MOSFETs", in IEEE Transactions on Industry Applications, Vol.33, 1997, pp.1267 -1272.
3. Xudong Huang, Huijie Yu, Jih-Sheng Lai, Hefner, A.R., Jr., Berning, D.W., "Characterization of paralleled super junction MOSFET devices under hard and soft-switching conditions", in proc. IEEE Power Electronics Specialists Conference, Vol.4, 2001, pp.2145-2150.
4. Jingdong Chen, Scott Downer and Anthony Murray and David Divins, "Analysis of Avalanche Behaviour for Paralleled MOSFETs," presented at SAE World Congress 2004.
5. Reinmuth, K., Amann, H., "The ruggedness of paralleled power MOSFETs", in proc. Fifth European Conference on Power Electronics and Applications, Vol.2, 1993, pp.680 - 684.
6. Nelson, J.J., Venkataramanan, G. Beihoff, B.C., "Investigation of parallel operation of IGBTs", in proc. IEEE IAS Annual Meeting, Vol.4,2002, pp.2585-2591.
7. Gutsmann, B., Mourick, P., Silber, D., "Exact inductive parasitic extraction for analysis of IGBT parallel switching including DCB-backside eddy currents", in proc. IEEE Power Electronics Specialists Conference, Vol.3, 2000, pp.1291-1295.
8. James B. Forsythe, "Paralleling of Power MOSFETs For Higher Power Output", International rectifier technical paper.
9. Shenai, K., "Effect of gate resistance on high-frequency power switching efficiencies of advanced power MOSFETs", in IEEE Transactions on Solid-State Circuits, Vol.25, 1990, pp.595 -601.