An integrated Silicon Carbide (SiC) based single phase rectifier with power factor correction

PESC Record - IEEE Annual Power Electronics Specialists Conference

Volumn 2005, Issue , 2005, Pages 2810-2816

  Durrani, Yamin Q ^b   Aeloiza, Eddy C ^b   Palma, L ^b   Enjeti, P ^a,b  

^a IEEE   (United States)

^b TEXAS A AND M UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EFFICIENCY EVALUATION; POWER FACTOR CORRECTION; SINGLE PHASE RECTIFIERS; SWITCHING LOSSES;

ELECTRIC INDUCTORS; ELECTRIC LOSSES; ELECTRIC RECTIFIERS; HIGH TEMPERATURE OPERATIONS; NATURAL FREQUENCIES; SWITCHING SYSTEMS;

SILICON CARBIDE;

EID: 33847728352     PISSN: 02759306     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PESC.2005.1582031     Document Type: Conference Paper

References (6)

1. P. N. Enjeti, R. Martinez "A high performance Single phase rectifier with input power factor correction". IEEE transactions on power electronics, Vol. 11. No. 2, March '96. pp 311-317.
2. B. Ozpineci, et all "Comparison of Wide-Bandgap Semiconductors for Power Electronics Applications" Report published Dec '03 Oak Ridge National Laboratory.
3. P. Friedrichs, at all "SiC Power devices with low on-resistance for fast switching applications" Proc. of ISPD'00 pp. 213-230.
4. A Mihalia, at all, "Towards Fully Integrated SiC cascode Power Switches, for high Voltage Applications". Proc. of ISPD'03, pp. 379-382.
5. P. Friedrichs, at all, "Stacked High Voltage Switch Based on SiC VJFETs". Proc. of ISPD'03. pp 139-142.
6. G. Spiazzi, at all, "Performance Evaluation of a Schottky SiC Power Diode in a Boost PFC Application". IEEE transaction on Power Electronics, Vol. 18, No. 6, Nov. '03. pp. 1249-1253.