Effect of Ag doping on the performance of ZnO thin film transistor

Thin Solid Films

Volumn 520, Issue 3, 2011, Pages 1160-1164

  Lee, Deuk Hee ^a,b   Park, Ki Ho ^a   Kim, Sangsig ^b   Lee, Sang Yeol ^a  

^a Korea Institute of Science and Technology   (South Korea)

^b Korea University   (South Korea)

Author keywords

Ag doped ZnO; Pulsed laser deposition; Thin film transistors; Zinc oxide

Indexed keywords

AG DOPING; AS-GROWN; BACK-GATE; CURRENT RATIOS; ELECTRON CARRIER; HEAVILY DOPED; HEXAGONAL STRUCTURES; HIGH TEMPERATURE; KRF EXCIMER LASER; LATTICE SITES; OXYGEN PRESSURE; POLYCRYSTALLINE PHASE; PREFERRED GROWTH; ROOM TEMPERATURE; SUBTHRESHOLD SWING; THERMALLY OXIDIZED; WURTZITES; ZNO; ZNO THIN FILM;

DEPOSITION; EXCIMER LASERS; FIELD EFFECT TRANSISTORS; METALLIC FILMS; OPTICAL FILMS; PULSED LASER DEPOSITION; PULSED LASERS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; THIN FILM TRANSISTORS; THIN FILMS; VAPOR DEPOSITION; ZINC; ZINC OXIDE; ZINC SULFIDE;

SILVER;

EID: 81855182112     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.04.064     Document Type: Conference Paper

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