Mechanism of ferromagnetism in nitrogen-doped ZnO: First-principle calculations

Physical Review B - Condensed Matter and Materials Physics

Volumn 78, Issue 7, 2008, Pages

  Shen, L ^a,b   Wu, R Q ^a   Pan, H ^c   Peng, G W ^a   Yang, M ^a   Sha, Z D ^a   Feng, Y P ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF HIGH PERFORMANCE COMPUTING   (Singapore)

^c OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 50949103807     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.78.073306     Document Type: Article

References (31)

1. T. Dietl, H. Ohno, F. Matsukura, J. Cibert, and D. Ferrand, Science SCIEAS 0036-8075 10.1126/science.287.5455.1019 287, 1019 (2000).
2. T. Dietl, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.2832613 103, 07D111 (2008).
3. R. Q. Wu, G. W. Peng, L. Liu, Y. P. Feng, Z. G. Huang, and Q. Y. Wu, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2335773 89, 062505 (2006).
4. J. H. Lee, I. H. Choi, S. Shin, S. Lee, J. Lee, C. Whang, S. C. Lee, K. R. Lee, J. H. Baek, K. H. Chae, and J. Song, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2431765 90, 032504 (2007).
5. L. H. Ye, A. J. Freeman, and B. Delley, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.73.033203 73, 033203 (2006).
6. D. B. Buchholz, R. P. H. Chang, J. H. Song, and J. B. Ketterson, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2032588 87, 082504 (2005).
7. K. Kenmochi, M. Seike, K. Sato, A. Yanase, and H. Katayama-Yoshida, Jpn. J. Appl. Phys., Part 2 JAPLD8 0021-4922 10.1143/JJAP.43.L934 43, L934 (2004).
8. I. S. Elfimov, A. Rusydi, S. I. Csiszar, Z. Hu, H. H. Hsieh, H.-J. Lin, C. T. Chen, R. Liang, and G. A. Sawatzky, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.98.137202 98, 137202 (2007).
9. C.-F. Yu, T.-J. Lin, S.-J. Sun, and H. Chou, J. Phys. D JPAPBE 0022-3727 10.1088/0022-3727/40/21/004 40, 6497 (2007).
10. L. Shen, R. Q. Wu, J. B. Yi, S. W. Yang, and Y. P. Feng (unpublished).
11. H. Pan, J. B. Yi, L. Shen, R. Q. Wu, J. H. Yang, J. Y. Lin, Y. P. Feng, J. Ding, L. H. Van, and J. H. Yin, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.99.127201 99, 127201 (2007).
12. J. J. Attema, G. A. de Wijs, G. R. Blake, and R. A. de Groot, J. Am. Chem. Soc. JACSAT 0002-7863 10.1021/ja0550834 127, 16325 (2005).
13. P. Fons, H. Tampo, A. V. Kolobov, M. Ohkubo, S. Niki, J. Tominaga, R. Carboni, F. Boscherini, and S. Friedrich, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.96.045504 96, 045504 (2006).
14. X. Li, Y. Yan, T. A. Gessert, C. L. Perkins, D. Young, C. DeHart, M. Young, and T. J. Coutts, J. Vac. Sci. Technol. A JVTAD6 0734-2101 10.1116/1.1584036 21, 1342 (2003).
15. T. Yamamoto and H. Katayama-Yoshida, Jpn. J. Appl. Phys., Part 2 JAPLD8 0021-4922 10.1143/JJAP.38.L166 38, L166 (1999).
16. Y. Yan, J. Li, S.-H. Wei, and M. M. Al-Jassim, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.98.135506 98, 135506 (2007).
17. J. G. Lu, Y. Z. Zhang, Z. Z. Ye, L. P. Zhu, L. Wang, and B. H. Zhao, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2209191 88, 222114 (2006).
18. M. H. F. Sluiter, Y. Kawazoe, P. Sharma, A. Inoue, A. R. Raju, C. Rout, and U. V. Waghmare, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.94. 187204 94, 187204 (2005).
19. G. Kresse and J. Hafner, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.47.558 47, 558 (1993).
20. J. P. Perdew, K. Burke, and M. Ernzerhof, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.77.3865 77, 3865 (1996).
21. H. Akai, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.81.3002 81, 3002 (1998).
22. K. Sato and H. Katayama-Yoshida, Jpn. J. Appl. Phys., Part 2 JAPLD8 0021-4922 10.1143/JJAP.39.L555 39, L555 (2000).
23. L. Liu, P. Y. Yu, Z. Ma, and S. S. Mao, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.100.127203 100, 127203 (2008).
24. D. Kitchen, A. Richardella, J.-M. Tang, M. E. Flatte, and A. Yazdani, Nature (London) NATUAS 0028-0836 10.1038/nature04971 442, 436 (2006).
25. A. C. Durst, R. N. Bhatt, and P. A. Wolff, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.65.235205 65, 235205 (2002).
26. Z. Y. Xiao, Y. C. Liu, B. H. Li, J. Y. Zhang, D. X. Zhao, Y. M. Lu, D. Z. Shen, and X. W. Fan, Semicond. Sci. Technol. SSTEET 0268-1242 10.1088/0268-1242/21/12/003 21, 1522 (2006).
27. M. Pan, J. Nause, V. Rengarajan, R. Rondon, E. H. Park, and I. T. Ferguson, J. Electron. Mater. JECMA5 0361-5235 10.1007/s11664-006-0056-6 36, 457 (2007).
28. P. Dev, Y. Xue, and P. Zhang, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.100.117204 100, 117204 (2008).
29. J. Li, S.-H. Wei, S.-S. Li, and J.-B. Xia, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.74.081201 74, 081201 (R) (2006).
30. M. Sanmyo, Y. Tomita, and K. Kobayashi, Thin Solid Films THSFAP 0040-6090 10.1016/j.tsf.2004.06.197 472, 189 (2005).
31. C. H. Park, S. B. Zhang, and S.-H. Wei, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.66.073202 66, 073202 (2002).