The effects of 12 MeV electron irradiation on the electrical characteristics of the Au/Aniline blue/p-Si/Al device

Microelectronics Reliability

Volumn 51, Issue 12, 2011, Pages 2216-2222

  Aydoǧan, Şakir ^a   Incekara, Ümit ^a   Türüt, Abdulmecit ^a  

^a ATATÜRK UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHTS; CAPACITANCE VOLTAGE; CONDUCTANCE METHOD; CONTACT PARAMETERS; CURRENT VOLTAGE; DIODE PARAMETERS; ELECTRICAL CHARACTERISTIC; FLUENCES; IDEALITY FACTORS; IONIZED DOPANTS; MEV-ELECTRONS; ORGANIC LAYERS; PHYSICAL BARRIERS; ROOM TEMPERATURE; SERIES RESISTANCES;

ELECTRIC RESISTANCE; ELECTRONS;

ELECTRON IRRADIATION;

EID: 81855170117     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2011.06.002     Document Type: Article

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