Electron irradiation effects on the organic-on-inorganic silicon Schottky structure

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 593, Issue 3, 2008, Pages 544-549

  Güllü, Ö ^a   Aydoǧan, Ş ^a   Serifoglu K ^b   Turut A ^a  

^a ATATÜRK UNIVERSITY   (Turkey)

^b ATATURK UNIVERSITY   (Turkey)

Author keywords

Electron irradiation; Ideality factor; Schottky barrier; Series resistance

Indexed keywords

CARRIER CONCENTRATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRONS; HEALTH; IRRADIATION; NANOSTRUCTURED MATERIALS; PARAMETER ESTIMATION; PHOTOACOUSTIC EFFECT; RADIATION;

BARRIER HEIGHT (BH); CARRIER (CO); CONCENTRATION (COMPOSITION); CONTACT PARAMETERS; CURRENT VOLTAGE (I V) CHARACTERISTICS; ELECTRICAL CHARACTERISTICS; ELSEVIER (CO); HIGH ENERGY ELECTRON IRRADIATION; IDEALITY FACTORS; INORGANIC SILICON; IRRADIATION EFFECTS; REVERSE BIASES; RHODAMINE (RHB); SCHOTTKY; SERIES RESISTANCE (ESR); THREE PARAMETERS;

ELECTRON IRRADIATION;

EID: 47849089239     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2008.05.043     Document Type: Article

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