Electrical properties of polymer/Si heterojunctions

Thin Solid Films

Volumn 343-344, Issue 1-2, 1999, Pages 469-475

  Musa, I ^a   Eccleston, W ^a  

^a UNIVERSITY OF LIVERPOOL   (United Kingdom)

Author keywords

Poly(3 octylthiophene); Schottky barrier; Semiconductor interface

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TUNNELING; HETEROJUNCTIONS; INTERFACES (MATERIALS); MULTILAYERS; PLASTIC FILMS; SEMICONDUCTING FILMS; SEMICONDUCTING POLYMERS; SEMICONDUCTOR DEVICE MODELS; SUBSTRATES;

CAPACITANCE-VOLTAGE CHARACTERISTICS; FOWLER-NORDHEIM TUNNELING; FREQUENCY DISPERSION; SCHOTTKY BARRIER FORMATION;

THIN FILMS;

EID: 0032669138     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)01661-7     Document Type: Article

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