Barrier modification of Au/n-GaAs Schottky diode by swift heavy ion irradiation

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 263, Issue 2, 2007, Pages 424-428

  Sharma, A T ^a   Shahnawaz, ^a   Kumar, Sandeep ^b   Katharria, Y S ^b   Kanjilal, D ^b  

^a UNIVERSITY OF DELHI   (India)

^b INTER UNIVERSITY ACCELERATOR CENTRE   (India)

Author keywords

Barrier height; Ideality factor; In situ I V; Ion irradiation; Schottky diode

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENT MEASUREMENT; ENERGY DISSIPATION; GALLIUM COMPOUNDS; ION BOMBARDMENT; VOLTAGE MEASUREMENT;

BARRIER HEIGHT; IDEALITY FACTORS; IN SITU I-V; METAL-SEMICONDUCTOR INTERFACE;

SCHOTTKY BARRIER DIODES;

EID: 34848924324     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2007.05.031     Document Type: Article

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