Advanced electron beam resist requirements and challenges

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 8166, Issue , 2011, Pages

  Jamieson, Andrew ^a   Kim, Yong Kwan ^a   Olson, Bennett ^a   Lu, Maiying ^a   Wilcox, Nathan ^a  

^a INTEL CORPORATION   (United States)

Author keywords

Electron beam lithography; LER; Photomask; Requirements; Resists; Resolution; Sensitivity

Indexed keywords

CRITICAL FACTORS; ELECTRON BEAM RESIST; EXPOSURE DOSE; INTEL MASK OPERATIONS; LER; MANUFACTURING PROCESS; MINIMUM FEATURE SIZES; PERFORMANCE METRICS; REQUIREMENTS; RESIST RESOLUTION; RESISTS; SENSITIVITY;

ELECTRON BEAM LITHOGRAPHY; ELECTRON BEAMS; OPTICAL RESOLVING POWER; PHOTOMASKS;

ELECTRONS;

EID: 81455148983     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.898901     Document Type: Conference Paper

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