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Volumn 7823, Issue PART 1, 2010, Pages

Resist process windows in electron-beam lithography

Author keywords

Electron beam lithography; Photomask; Proximity effects; Resist; Resolution

Indexed keywords

AERIAL IMAGES; ANALYSIS TECHNIQUES; BEAM CORRECTION; CORRECTION METHOD; DIE-TO-DIE INSPECTION; HIGH RESOLUTION; PATTERN DENSITY; PROXIMITY EFFECTS; RESIST; RESIST PROCESS; RESIST RESOLUTION; RESOLUTION; RESOLUTION PROCESS; SUB RESOLUTION ASSIST FEATURE;

EID: 78649870565     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.868037     Document Type: Conference Paper
Times cited : (2)

References (10)
  • 1
    • 78649875252 scopus 로고    scopus 로고
    • Electron beam lithography compensation techniques for longrange critical dimension (CD) errors to meet the requirements of the 90nm node and beyond
    • Nathan Wilcox, Matt Vernon, and Yoshihiro Tezuka "Electron beam lithography compensation techniques for longrange critical dimension (CD) errors to meet the requirements of the 90nm node and beyond" EIBPN (2003)
    • (2003) EIBPN
    • Wilcox, N.1    Vernon, M.2    Tezuka, Y.3
  • 2
    • 33748091381 scopus 로고    scopus 로고
    • Electron beam lithography time dependent dose correction for reticle CD uniformity enhancement
    • Nathan Wilcox, Matt Vernon, and Andrew Jamieson "Electron beam lithography time dependent dose correction for reticle CD uniformity enhancement" Proc. SPIE 6283, 628307 (2006)
    • (2006) Proc. SPIE , vol.6283 , pp. 628307
    • Wilcox, N.1    Vernon, M.2    Jamieson, A.3
  • 7
    • 0035189673 scopus 로고    scopus 로고
    • Electron-beam lithography simulation for mask making: Vi. Comparison of 10- and 50-kV GHOST proximity effect correction
    • Chris A. Mack "Electron-beam lithography simulation for mask making: VI. Comparison of 10- and 50-kV GHOST proximity effect correction" Proc. SPIE 4409, 194 (2001)
    • (2001) Proc. SPIE , vol.4409 , pp. 194
    • Mack, C.A.1
  • 8
    • 0141722490 scopus 로고    scopus 로고
    • Measuring and modeling flare in optical lithography
    • Chris A. Mack "Measuring and modeling flare in optical lithography" Proc. SPIE 5040, 151 (2003)
    • (2003) Proc. SPIE , vol.5040 , pp. 151
    • Mack, C.A.1
  • 9
    • 24644507855 scopus 로고    scopus 로고
    • Flare and lens aberration requirements for EUV lithographic tools
    • Sang Hun Lee, Yashesh Shroff, and Manish Chandhok "Flare and lens aberration requirements for EUV lithographic tools" Proc. SPIE 5751, 707 (2005)
    • (2005) Proc. SPIE , vol.5751 , pp. 707
    • Lee, S.H.1    Shroff, Y.2    Chandhok, M.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.