메뉴 건너뛰기




Volumn 311, Issue 7, 2009, Pages 2215-2219

Epitaxial films for Ge-Sb-Te phase change memory

Author keywords

A1. Reflection high energy electron diffraction; A1. X ray diffraction; A3. Molecular beam epitaxy; B2. Chalcogenides; B3. Phase change memory

Indexed keywords

AMORPHOUS MATERIALS; CHALCOGENIDES; CRYSTAL GROWTH; ELECTRON DIFFRACTION; EPITAXIAL FILMS; EPITAXIAL LAYERS; GERMANIUM; LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; REFLECTION; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTOR QUANTUM WIRES; TELLURIUM COMPOUNDS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

EID: 63349110693     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.11.028     Document Type: Article
Times cited : (24)

References (16)
  • 3
    • 63349087277 scopus 로고    scopus 로고
    • T. Ohta, S.R. Ovshinsky, Wiley-VCH, Berlin, 2003, pp. 310-326.
    • T. Ohta, S.R. Ovshinsky, Wiley-VCH, Berlin, 2003, pp. 310-326.
  • 4
    • 63349110571 scopus 로고    scopus 로고
    • IBM/Mactronics/Quimonda, International Electronic Devices Meeting, San Francisco
    • IBM/Mactronics/Quimonda, International Electronic Devices Meeting, San Francisco, 2006.
    • (2006)
  • 15
    • 0003472812 scopus 로고
    • Addison-Wesley Publishing Co., Reading, MA p. 374
    • Warren B.E. X-Ray Diffraction (1969), Addison-Wesley Publishing Co., Reading, MA p. 374
    • (1969) X-Ray Diffraction
    • Warren, B.E.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.