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Volumn 311, Issue 7, 2009, Pages 2215-2219
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Epitaxial films for Ge-Sb-Te phase change memory
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Author keywords
A1. Reflection high energy electron diffraction; A1. X ray diffraction; A3. Molecular beam epitaxy; B2. Chalcogenides; B3. Phase change memory
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Indexed keywords
AMORPHOUS MATERIALS;
CHALCOGENIDES;
CRYSTAL GROWTH;
ELECTRON DIFFRACTION;
EPITAXIAL FILMS;
EPITAXIAL LAYERS;
GERMANIUM;
LATTICE CONSTANTS;
MOLECULAR BEAM EPITAXY;
MOLECULAR BEAMS;
MOLECULAR DYNAMICS;
REFLECTION;
REFLECTION HIGH ENERGY ELECTRON DIFFRACTION;
SEMICONDUCTOR QUANTUM WIRES;
TELLURIUM COMPOUNDS;
X RAY DIFFRACTION;
X RAY DIFFRACTION ANALYSIS;
A1. REFLECTION HIGH-ENERGY ELECTRON DIFFRACTION;
A1. X-RAY DIFFRACTION;
A3. MOLECULAR BEAM EPITAXY;
B2. CHALCOGENIDES;
B3. PHASE CHANGE MEMORY;
PHASE CHANGE MEMORY;
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EID: 63349110693
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2008.11.028 Document Type: Article |
Times cited : (24)
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References (16)
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