Atomic layer deposition of materials for phase-change memories

ECS Transactions

Volumn 25, Issue 4, 2009, Pages 399-407

  Leskelä, Markku ^a   Pore, Viljami ^a   Hatanpää, Timo ^a   Heikkilä, Mikko ^a   Ritala, Mikko ^a   Schrott, Alejandro ^b   Raoux, Simone ^b   Rossnagel, Stephen M ^b  

^a UNIVERSITY OF HELSINKI   (Finland)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONY COMPOUNDS; ATOMS; CHLORINE COMPOUNDS; GERMANIUM COMPOUNDS; METAL HALIDES; PHASE CHANGE MATERIALS; PHASE CHANGE MEMORY; SILICON; SILICON COMPOUNDS; TELLURIUM; TELLURIUM COMPOUNDS; THIN FILMS;

BINARY CYCLES; CUBIC STRUCTURE; DEPOSITED FILMS; GENERAL FORMULAS; GERMANIUM ANTIMONY TELLURIDES; HEXAGONAL PHASE; TERNARY MATERIALS; THIN-FILM DEPOSITIONS;

ATOMIC LAYER DEPOSITION;

EID: 74349083544     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3205074     Document Type: Conference Paper

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