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Volumn 4, Issue 11, 2011, Pages

Metal organic chemical vapor deposition growth of high spectral quality site-controlled InAs quantum dots using in situ patterning

(5) Faure, Stephane a Nishioka, Masao b Ishida, Satomi c Guimard, Denis a,b Arakawa, Yasuhiko a,b

a UNIVERSITY OF TOKYO (Japan)

b INSTITUTE OF INDUSTRIAL SCIENCE (Japan)

c UNIVERSITY OF TOKYO (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GAAS SUBSTRATES; GROWTH PARAMETERS; HIGH QUALITY; IN-SITU; INAS; INAS QUANTUM DOTS; LOW TEMPERATURES; NANOHOLES; OPTICAL CHARACTERIZATION; SHAPE AND SIZE; SPECTRAL QUALITY; THERMAL ETCHING;

ELECTRON BEAMS; INDIUM ARSENIDE; LITHOGRAPHY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; ORGANOMETALLICS; SEMICONDUCTOR QUANTUM DOTS; SURFACE DEFECTS; WET ETCHING;

QUALITY CONTROL;

EID: 81055137122 PISSN: 18820778 EISSN: 18820786 Source Type: Journal
DOI: 10.1143/APEX.4.112001 Document Type: Article

Times cited : (4)

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