Tuning the bandgap of InAs quantum dots by selective-area MOCVD

Journal of Physics D: Applied Physics

Volumn 41, Issue 8, 2008, Pages

  Mokkapati, S ^a   Wong Leung, J ^a   Tan, H H ^a   Jagadish, C ^a   McBean, K E ^b   Phillips, M R ^b  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^b UNIVERSITY OF TECHNOLOGY SYDNEY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; ENERGY GAP; INDIUM ARSENIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; TRANSMISSION ELECTRON MICROSCOPY; TUNING;

GROWTH PROFILES; SURFACE MIGRATION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 42549138243     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/41/8/085104     Document Type: Article

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